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Boosting K-ion kinetics by interfacial polarization induced by amorphous MoO_(3-x)for MoSe_(2)/MoO_(3-x)@rGO composites 被引量:1
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作者 Jiangshao Yang Liwen Liu +5 位作者 daoyi wang Jianming Tao Yanming Yang Jiaxin Li Yingbin Lin Zhigao Huang 《Journal of Materials Science & Technology》 SCIE EI CAS CSCD 2022年第20期232-240,共9页
Promoting interfacial reaction kinetics is highly desirable for achieving high-performances of anode material in alkali-ion batteries.Herein,flower-like MoSe_(2)/MoO_(3-x)@r GO composites are fabricated by a facile so... Promoting interfacial reaction kinetics is highly desirable for achieving high-performances of anode material in alkali-ion batteries.Herein,flower-like MoSe_(2)/MoO_(3-x)@r GO composites are fabricated by a facile solvothermal method involving a thermal-treatment at 800°C.When evaluated as an anode material for potassium ion batteries,MoSe_(2)/MoO_(3-x)@r GO delivers 248.2 m A h g^(-1)after 50 cycles at 0.2 A g^(-1) with a capacity retention of 84.6%and 182.9 m A h g^(-1)after 150 cycles at 1.0 A g^(-1) with a capacity retention of almost 61.2%,superior to those of bare MoSe_(2)or MoSe_(2)@r GO composites.Analysis from electrochemical measurements,the amorphous MoO_(3-x)containing oxygen vacancies could not only effectively buffer the self-aggregation of MoSe_(2)nanosheets but also provides lots of accessible active sites for potassium ion storage.Additionally,the open channels in the amorphous MoO_(3-x) phase lead to easier ion hopping and smaller diffusion barriers.Furthermore,the built-in electric field at the interface would be beneficial for electron transfer and K-ion migration across the hetero-junction interface.Moreover,larger dielectric polarization induced by the high relative permittivity of amorphous MoO_(3-x) would reduce charge transfer resistance and enhance K-ion migration across electric double-layer.Our work provides new insight into the enhanced performance of anode material coated by an amorphous layer with large relative permittivity. 展开更多
关键词 Potassium ion batteries MoSe_(2) AMORPHOUS Work function Heterojunction interface
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