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Thermal analysis of GaN-based laser diode mini-array
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作者 Jun-Jie Hu Shu-Ming Zbang +6 位作者 de-yao li Feng Zhang Mei-Xin Feng Peng-Yan Wen Jian-Ping liu li-Qun Zhang Hui Yang 《Chinese Physics B》 SCIE EI CAS CSCD 2018年第9期311-315,共5页
Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimi... Thermal characteristics of multiple laser stripes integrated into one chip is investigated theoretically in this paper. The temperature pattern of the laser diode mini-array packaged in a TO-can is analyzed and optimized to achieve a uniform temperature distribution among the laser stripes and along the cavity direction. The temperature among the laser stripes varies by more than 5 K if the stripes are equally arranged, and can be reduced to less than 0.4 K if proper arrangement is designed. For conventional submount structure, the temperature variation along the cavity direction is as high as 7 K, while for an optimized trapezoid submount structure, the temperature varies only within 0.5 K. 展开更多
关键词 GaN laser diode laser diode array thermal analysis temperature distribution
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Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current
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作者 Xiao-Wang Fan Jian-Ping liu +8 位作者 Feng Zhang Masao Ikeda de-yao li Shu-Ming Zhang li-Qun Zhang Ai-Qin Tian Peng-Yan Wen Guo-Hong Ma Hui Yang 《Chinese Physics Letters》 SCIE CAS CSCD 2017年第9期109-111,共3页
Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC ... Electroluminescence (EL) and temperature-dependent photolumineseenee measurements are performed to study the internal quantum efficiency droop phenomenon of blue laser diodes (LDs) before lasing. Based on the ABC mode, the EL result demonstrates that non-radiative recombination rates of LDs with threshold current densities of 4 and 6kA/cm2 are similar, while LD with threshold current density of 4kA/cm2 exhibits a smaller auger- like recombination rate compared with the one of 6kA/cm2. The internal quantum efficiency droop is more serious for LD with higher threshold current density. temperature-dependent photoluminescence is consistent The internal quantum efficiency value estimated from with EL measurements. 展开更多
关键词 INGAN LD Effect of Droop Phenomenon in InGaN/GaN Blue Laser Diodes on Threshold Current
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