1.Introduction Silicon photonic integration is considered to be one of the most promising techniques in realizing high-density photonic integrated circuits because of its compact device size and CMOS compatible fabric...1.Introduction Silicon photonic integration is considered to be one of the most promising techniques in realizing high-density photonic integrated circuits because of its compact device size and CMOS compatible fabrication process.However,due to the large index contrast of silicon waveguides,silicon photonic devices are affected by the large polarization mode dispersion,polarization dependent loss and polarization dependent wavelength characteristics.Polarization transparent circuits and polarization diversity schemes,which have polarization rotators and splitters as common key devices,have been proposed to solve this issue[1–3].展开更多
基金supported by the National Key Research and Development Program of China (No. 2016YFB0402505)the National Science Foundation of China (NSFC) (No. 61575189 and No. 61635011)
文摘1.Introduction Silicon photonic integration is considered to be one of the most promising techniques in realizing high-density photonic integrated circuits because of its compact device size and CMOS compatible fabrication process.However,due to the large index contrast of silicon waveguides,silicon photonic devices are affected by the large polarization mode dispersion,polarization dependent loss and polarization dependent wavelength characteristics.Polarization transparent circuits and polarization diversity schemes,which have polarization rotators and splitters as common key devices,have been proposed to solve this issue[1–3].
