The self-catalyzed growth of Ga As nanowires(NWs)on silicon(Si)is an effective way to achieve integration between group III–V elements and Si.High-crystallinity uniform Ga As NW arrays were grown by solid-source mole...The self-catalyzed growth of Ga As nanowires(NWs)on silicon(Si)is an effective way to achieve integration between group III–V elements and Si.High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE).In this paper,we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials.The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail.The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time.This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates.The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.展开更多
Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional ...Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.展开更多
基金the National Natural Science Foundation of China(Grant Nos.61674021,11674038,61704011,61904017,11804335,and 12074045)the Developing Project of Science and Technology of Jilin Province,China(Grant No.20200301052RQ)+1 种基金the Project of Education Department of Jilin Province,China(Grant No.JJKH20200763KJ)the Youth Foundation of Changchun University of Science and Technology(Grant No.XQNJJ-2018-18)。
文摘The self-catalyzed growth of Ga As nanowires(NWs)on silicon(Si)is an effective way to achieve integration between group III–V elements and Si.High-crystallinity uniform Ga As NW arrays were grown by solid-source molecular beam epitaxy(MBE).In this paper,we describe systematic experiments which indicate that the substrate treatment is crucial to the highly crystalline and uniform growth of one-dimensional nanomaterials.The influence of natural oxidation time on the crystallinity and uniformity of Ga As NW arrays was investigated and is discussed in detail.The Ga As NW crystallinity and uniformity are maximized after 20 days of natural oxidation time.This work provides a new solution for producing high-crystallinity uniform III–V nanowire arrays on wafer-scale Si substrates.The highly crystalline uniform NW arrays are expected to be useful for NW-based optical interconnects and Si platform optoelectronic devices.
基金financially supported by the National Natural Science Foundation of China (Nos. 62074018 and 61704011)the China Postdoctoral Science Foundation Funded Project (Nos. 2019M652176 and 2019M661680)+4 种基金the Developing Project of Science and Technology of Jilin Province (Nos. 20200301052RQ, 20200201266JC, 20190701029GH, 20180519017JH and 20180520177JH)the Project of Education Department of Jilin Province (No. JJKH20210831KJ)the Natural Science Foundation of Guangdong Province (No. 2020A1515010868)Shenzhen Fundamental Research Fund (No. JCYJ20180307151538972)supported by R&D project of Collighter Co., Ltd。
文摘Ga-free InAs/InAsSb type-Ⅱ superlattices(T2SL) have extensive application prospective in infrared photodetectors. Achieving higher operation temperature is critical to its commercial applications. Here, a fractional monolayer alloy method was used to grow InAsSb alloy with better controlled alloy composition. The as-grown T2SL gave eleven satellite peaks and a first satellite peak with a narrow full-width-half-maximum (FWHM) of 20.5arcsec (1 arcsec=0.01592°). Strain mapping results indicated limited Sb diffusion through the As-Sb exchange process at the interface. Moreover, unlike interface states caused by the As-Sb exchange effect, this relatively clear interface was distinctive with localized states with higher activation energies of the non-radiative recombination process ((18±1) meV and (84±12) meV at different temperature ranges), which means that this interface state introduced by fractional monolayer alloy growth method can effectively suppress Auger recombination process in T2SL. Through this interface engineering of InAs/InAsSb Type-Ⅱ superlattice, it achieved detective photoluminescence (PL) signal with the center wavelength of 9μm at 250K.
