Efficient quantum dot light-emitting diodes with ultra-homogeneous and highly ordered quantum dot monolayer

Regarding conventional quantum dot lightemitting diodes(QLEDs)fabricated by using the spin-coating(SC)technique,voids and interstitial spaces are inevitable due to unordered quantum dots(QDs)stacking,generating device leakage current under an external bias.In the present study,we fabricated an ultra-homogeneous and highly ordered QD monolayer by adopting the Langmuir-Blodgett(LB)technique.The QD monolayer was transferred as a emissive layer with a horizontal lifting(HL)method to a red QLED,which exhibited high performance with an external quantum efficiency(EQE)of 19.0% and lifetime(T_(95)@100 cd m^(-2))of13,324 h.When compared with the SC-based device,the EQE and lifetime were improved by 15% and 183% due to the compact and ordered QD monolayer that lowered the leakage current.Moreover,white QLEDs with stacked QD monolayers could be obtained at a low voltage of 4 V because LB technique is an organic-solvent-free approach avoiding interlayer mixing and controlling the QD layer thickness precisely.In addition,we successfully fabricated an ultra-homogeneous large-area QD monolayer on a rectangular substrate with a size of 9 cm×5 cm,indicating the promising size scalability of the LB-HL strategy.