To copy natural photosynthesis process we need to understand and explain the physics underneath its first step mechanism, which is “how to separate electrical charges under attraction”. But this Nature’s nanotechno...To copy natural photosynthesis process we need to understand and explain the physics underneath its first step mechanism, which is “how to separate electrical charges under attraction”. But this Nature’s nanotechnological creation is not yet available to the scientific community. We present a new interpretation for the artificial and natural photosynthetic mechanism, concerning the electrical charges separation and the spent energy to promote the process. Interface (e–, h+) recombination and emission is applied to explain the photosynthetic mechanisms. This interpretation is based on energy bands relative position, the staggered one, which under illumination promotes (e–, h+) charges separation through the action of an interface electric field and energy consumption at the interface of both A/B generic materials. Energy band bending is responsible by the interface electric field (and the driving force) for the charges separation. This electric field can be as high or above that for p-n semiconductor junctions (104 - 105 V/cm). This physical effect is not considered by most of the researches. Without an electric field and without spending energy to separate electrical charges, any other existing model violates physical laws. The staggered energy band type is the only energetic configuration that permits charges separation under illumination and energy loss to perform the process. Application to natural photosynthesis and artificial photovoltaic material and their energetic configurations are discussed. Examples for A/B being III-V/III-V, TiO2/materials and II-VI/II-VI staggered energy band gap pairs are presented. In the proposed quantum mechanism, plants are able to eliminate most of the 79% of the absorbed visible light, according to the published reflection and transmission data. Moreover, the proposed mechanism can be applied to explain green fluorescent protein - GFP, charge transfer states - CTS and Fluorescent Resonance Energy Transfer - FRET. As recent literature experimental results propose photosynthesis as a quantum controlled mechanism, our proposition goes forward this direction.展开更多
In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporati...In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. The Scanning Electron Microscopy (SEM) showed that the morphological surface of the films was affected by Sn low doping. The X-Ray Diffraction (XRD) patterns showed that all films have polycrystalline structures, and the doping incorporation has not lead to substantial changes in the structural characteristics of ZnO films. The crystallite size was calculated using the well-known Scherrer’s formula and found to be in the range of 23 - 40 nm. The measurements from UV-Visible Spectrophotometer (U-Vis) indicated that the highest average optical transmittance in the visible region was related to Undoped ZnO film, then the optical band gap and Urbach energy values of thin films were calculated. The X-Ray Photoelectron Spectroscopy (XPS) has demonstrated that Sn is incorporated in ZnO lattice.展开更多
Polycrystalline powders of (1–x)Na_(0.5)Bi_(0.5)TiO_3–xCaTiO_3 ((1–x)NBT–xCT, 0 ≤ x ≤ 0.55) have been synthesized by solid state route. The effects of simultaneous substitution of Na^+/Bi^(3+) at A-site in NBT o...Polycrystalline powders of (1–x)Na_(0.5)Bi_(0.5)TiO_3–xCaTiO_3 ((1–x)NBT–xCT, 0 ≤ x ≤ 0.55) have been synthesized by solid state route. The effects of simultaneous substitution of Na^+/Bi^(3+) at A-site in NBT on structural and dielectric properties were investigated. X-ray diffraction analysis revealed the phase transition from rhombohedral structure(x = 0) to orthorhombic structure(x ≥0.15). A distinct behaviour in dielectric properties was obtained, where for x = 0, a normal ferroelectric behaviour was observed, whereas for x ≥ 0.15, a broad dielectric anomaly was revealed such that the maximum temperature(T_m) strongly depended on the frequency and shifted towards low temperature with CT. The dielectric dispersion indicated a relaxor behaviour revealed by the degree of diffuseness and modelled via Vogel–Fulcher relation. The study highlighted the relaxor behaviour as a function of frequency and proved the transformation from a relaxor high-frequency dependence to a paraelectric phase at temperature T_s. The distinct variation of the Raman spectra at room temperature was correlated with X-ray diffraction results and proved the already mentioned transition. On heating(-193–500 ℃), the Raman spectra confirmed the structural stability(Pnma) of the materials. The phonon behaviour for x = 0.15 was discussed in terms of the appearance of polar nanoregions(PNRs) into a non-polar orthorhombic matrix responsible of the relaxor behaviour. For x = 0.20, unchanged phonon behaviour confirmed the variation in dielectric behaviour where the solids transformed from a relaxor to a paraelectric state without structural phase transition.展开更多
文摘To copy natural photosynthesis process we need to understand and explain the physics underneath its first step mechanism, which is “how to separate electrical charges under attraction”. But this Nature’s nanotechnological creation is not yet available to the scientific community. We present a new interpretation for the artificial and natural photosynthetic mechanism, concerning the electrical charges separation and the spent energy to promote the process. Interface (e–, h+) recombination and emission is applied to explain the photosynthetic mechanisms. This interpretation is based on energy bands relative position, the staggered one, which under illumination promotes (e–, h+) charges separation through the action of an interface electric field and energy consumption at the interface of both A/B generic materials. Energy band bending is responsible by the interface electric field (and the driving force) for the charges separation. This electric field can be as high or above that for p-n semiconductor junctions (104 - 105 V/cm). This physical effect is not considered by most of the researches. Without an electric field and without spending energy to separate electrical charges, any other existing model violates physical laws. The staggered energy band type is the only energetic configuration that permits charges separation under illumination and energy loss to perform the process. Application to natural photosynthesis and artificial photovoltaic material and their energetic configurations are discussed. Examples for A/B being III-V/III-V, TiO2/materials and II-VI/II-VI staggered energy band gap pairs are presented. In the proposed quantum mechanism, plants are able to eliminate most of the 79% of the absorbed visible light, according to the published reflection and transmission data. Moreover, the proposed mechanism can be applied to explain green fluorescent protein - GFP, charge transfer states - CTS and Fluorescent Resonance Energy Transfer - FRET. As recent literature experimental results propose photosynthesis as a quantum controlled mechanism, our proposition goes forward this direction.
文摘In this work, Undoped Zinc Oxide (ZnO) and Sndoped Zinc Oxide (ZnO:Sn) films have been deposited by sol-gel dip coating method, where the Sn/Zn atomic ratio was 3% and 5% in the solution. The effects of Sn incorporation on morphological, structural and optical properties of ZnO films were investigated. The Scanning Electron Microscopy (SEM) showed that the morphological surface of the films was affected by Sn low doping. The X-Ray Diffraction (XRD) patterns showed that all films have polycrystalline structures, and the doping incorporation has not lead to substantial changes in the structural characteristics of ZnO films. The crystallite size was calculated using the well-known Scherrer’s formula and found to be in the range of 23 - 40 nm. The measurements from UV-Visible Spectrophotometer (U-Vis) indicated that the highest average optical transmittance in the visible region was related to Undoped ZnO film, then the optical band gap and Urbach energy values of thin films were calculated. The X-Ray Photoelectron Spectroscopy (XPS) has demonstrated that Sn is incorporated in ZnO lattice.
基金supported by the Nanosciences Department of Universitéde Bourgogne
文摘Polycrystalline powders of (1–x)Na_(0.5)Bi_(0.5)TiO_3–xCaTiO_3 ((1–x)NBT–xCT, 0 ≤ x ≤ 0.55) have been synthesized by solid state route. The effects of simultaneous substitution of Na^+/Bi^(3+) at A-site in NBT on structural and dielectric properties were investigated. X-ray diffraction analysis revealed the phase transition from rhombohedral structure(x = 0) to orthorhombic structure(x ≥0.15). A distinct behaviour in dielectric properties was obtained, where for x = 0, a normal ferroelectric behaviour was observed, whereas for x ≥ 0.15, a broad dielectric anomaly was revealed such that the maximum temperature(T_m) strongly depended on the frequency and shifted towards low temperature with CT. The dielectric dispersion indicated a relaxor behaviour revealed by the degree of diffuseness and modelled via Vogel–Fulcher relation. The study highlighted the relaxor behaviour as a function of frequency and proved the transformation from a relaxor high-frequency dependence to a paraelectric phase at temperature T_s. The distinct variation of the Raman spectra at room temperature was correlated with X-ray diffraction results and proved the already mentioned transition. On heating(-193–500 ℃), the Raman spectra confirmed the structural stability(Pnma) of the materials. The phonon behaviour for x = 0.15 was discussed in terms of the appearance of polar nanoregions(PNRs) into a non-polar orthorhombic matrix responsible of the relaxor behaviour. For x = 0.20, unchanged phonon behaviour confirmed the variation in dielectric behaviour where the solids transformed from a relaxor to a paraelectric state without structural phase transition.
