We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells(MQWs)active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy(LP-OMVPE)in a high-temperat...We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells(MQWs)active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy(LP-OMVPE)in a high-temperature reactor.The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source.A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm^2.The emission is completely TE polarized and the side mode suppression ratio(SMSR)is measured to be around 14 dB at 450 kW/cm^2.展开更多
基金The work was supported by Defense Advanced Research Projects Agency(DARPA)under grant # HR0011-15-2-0002.The program managers are Dr.Daniel Green and Dr.Young-Kai Chen.
文摘We report here an optically pumped deep UV edge emitting laser with AlGaN multiple quantum wells(MQWs)active region grown on AlN substrate by low pressure organometallic vapor phase epitaxy(LP-OMVPE)in a high-temperature reactor.The 21 period Al0.53Ga0.47N/Al0.7Ga0.3N MQWs laser structure was optically pumped using 193 nm deep UV excimer laser source.A laser peak was achieved from the cleaved facets at 280.3 nm with linewidth of 0.08 nm at room temperature with threshold power density of 320 kW/cm^2.The emission is completely TE polarized and the side mode suppression ratio(SMSR)is measured to be around 14 dB at 450 kW/cm^2.
