A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates（SiO2, Al2O3, etc.） by remote catalyzation of Cu nanoparticles（...A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates（SiO2, Al2O3, etc.） by remote catalyzation of Cu nanoparticles（NPs） using ambient pressure chemical vapor deposition（APCVD）. The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes.Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications.展开更多
An effective approach was presented to enhance photoelectric conversion efficiency of Cu(In,Ga)Se2 (CIGS) solar cells by using modified SiO2 antireflection coatings(ARCs) to harvest more incident sunlight.Polyethylene...An effective approach was presented to enhance photoelectric conversion efficiency of Cu(In,Ga)Se2 (CIGS) solar cells by using modified SiO2 antireflection coatings(ARCs) to harvest more incident sunlight.Polyethylene glycol(PEG) and polyvinyl pyrrolidone(PVP) used as additives were introduced into silica sols to prepare SiO2-PEG and SiO2-PVP coatings in the sol-gel dip-coating process,respectively. The different effects of PEG and PVP additives on SiO2 coatings were analyzed and the antireflection performance of SiO2-PEG and SiO2-PVP coatings was investigated. The transmittance over 97% ranging from 450 nm to 700 nm with a maximum transmittance over 99.40% at about 550 nm was achieved for both SiO2-PEG2000A and SiO2-PVP0.5 coatings. The relative efficiencies of CIGS solar cells coated with SiO2-PEG2000A and SiO2-PVP0.5 ARCs were increased by 7.27% and 8.33%,respectively. The modified SiO2 ARCs possessed the advantages of the low manufacturing cost,good adhesion,superior antireflective performance and the feasible method for large area fabrication.展开更多
基金financial support from National Natural Science Foundation of China (No. 61205177)Shanghai Science and Technology Committee Grants (Nos. 13JC1405700, 11JC1403400 and 08JC1408600)
文摘A novel method avoiding the complex transfer process is proposed to directly grow low-defect and few-layer graphene on different insulating substrates（SiO2, Al2O3, etc.） by remote catalyzation of Cu nanoparticles（NPs） using ambient pressure chemical vapor deposition（APCVD）. The insulating substrates with special structure are used as templates to grow wrapped graphene sheets with special shapes.Hollow graphene species are obtained by removing the substrates. The prime feature of the proposed method is using Cu NPs as catalyst rather than metal foils. The Cu NPs play an important role in the remote catalyzation during the nucleation of graphene. This method can improve the quality and relatively decrease the growth temperature of the graphene on the insulating substrates, which displays the great potential of APCVD direct growth of graphene on dielectric substrates for electronic and photovoltaic applications.
基金financial support of the projects from the National Natural Science Foundation of China (Nos.61205177,51125006 and 61376056)the National High Technology Research and Development Program of China (No.2011AA050505)the Science and Technology Commission of Shanghai Municipality (Nos.11JC1403400,13JC1405700 and 14520722000)
文摘An effective approach was presented to enhance photoelectric conversion efficiency of Cu(In,Ga)Se2 (CIGS) solar cells by using modified SiO2 antireflection coatings(ARCs) to harvest more incident sunlight.Polyethylene glycol(PEG) and polyvinyl pyrrolidone(PVP) used as additives were introduced into silica sols to prepare SiO2-PEG and SiO2-PVP coatings in the sol-gel dip-coating process,respectively. The different effects of PEG and PVP additives on SiO2 coatings were analyzed and the antireflection performance of SiO2-PEG and SiO2-PVP coatings was investigated. The transmittance over 97% ranging from 450 nm to 700 nm with a maximum transmittance over 99.40% at about 550 nm was achieved for both SiO2-PEG2000A and SiO2-PVP0.5 coatings. The relative efficiencies of CIGS solar cells coated with SiO2-PEG2000A and SiO2-PVP0.5 ARCs were increased by 7.27% and 8.33%,respectively. The modified SiO2 ARCs possessed the advantages of the low manufacturing cost,good adhesion,superior antireflective performance and the feasible method for large area fabrication.
