We establish a quantum theory of computational ghost imaging and propose quantum projection imaging where object information can be reconstructed by quantum statistical correlation between a certain photon number of a...We establish a quantum theory of computational ghost imaging and propose quantum projection imaging where object information can be reconstructed by quantum statistical correlation between a certain photon number of a bucket signal and digital micromirror device random patterns. The reconstructed image can be negative or positive, depending on the chosen photon number. In particular, the vacuum state (zero-number) projection produces a negative image with better visibility and contrast-to-noise ratio. The experimental results of quantum projection imaging agree well with theoretical simulations and show that, under the same measurement condition, vacuum projection imaging is superior to conventional and fast first-photon ghost imaging in low-light illumination.展开更多
Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-...Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.12274037 and 11674273)the Natural Science Foundation of Hebei Province (No.A202220103)。
文摘We establish a quantum theory of computational ghost imaging and propose quantum projection imaging where object information can be reconstructed by quantum statistical correlation between a certain photon number of a bucket signal and digital micromirror device random patterns. The reconstructed image can be negative or positive, depending on the chosen photon number. In particular, the vacuum state (zero-number) projection produces a negative image with better visibility and contrast-to-noise ratio. The experimental results of quantum projection imaging agree well with theoretical simulations and show that, under the same measurement condition, vacuum projection imaging is superior to conventional and fast first-photon ghost imaging in low-light illumination.
基金National Natural Science Foundation of China (NSFC) (61376069,11775134)Key Research and Development Plan of Shandong Province,China (2018GGX102024,2018GGX102014)
文摘Distributed Bragg reflectors (DBRs) are essential components for the development of optoelectronic devices.In this paper, we first report the use of the nanoporous GaN (NP-GaN) DBR as a template for regrowth of InGaN-based light-emitting diodes (LEDs). The wafer-scale NP-GaN DBR, which is fabricated by electrochemical etching in a neutral solution, has a smooth surface, high reflectivity (>99.5%), and wide spectral stop band width (>70 nm). The chemical composition of the regrown LED thin film is similar to that of the reference LED, but the photoluminescence (PL) lifetime, PL intensity, and electroluminescence intensity of the LED with the DBR are enhanced several times compared to those of the reference LED. The intensity enhancement is attributed to the light reflection effect of the NP-GaN DBR and improved crystalline quality as a result of the etching scheme, whereas the enhancement of PL lifetime is attributable to the latter.
