提出了一种新的FFF金属打印技术,即低价金属熔融沉积成型技术(Low-cost Metal Material Extrusion,简称LCMME),通过混合了金属粉末的聚合物材料替代纯金属丝来实现相对低温条件下的金属材料3D打印,解决了传统FFF技术无法进行纯金属3D打...提出了一种新的FFF金属打印技术,即低价金属熔融沉积成型技术(Low-cost Metal Material Extrusion,简称LCMME),通过混合了金属粉末的聚合物材料替代纯金属丝来实现相对低温条件下的金属材料3D打印,解决了传统FFF技术无法进行纯金属3D打印的问题,降低了打印金属材料零件的成本。展开更多
Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-Si...Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.展开更多
文摘提出了一种新的FFF金属打印技术,即低价金属熔融沉积成型技术(Low-cost Metal Material Extrusion,简称LCMME),通过混合了金属粉末的聚合物材料替代纯金属丝来实现相对低温条件下的金属材料3D打印,解决了传统FFF技术无法进行纯金属3D打印的问题,降低了打印金属材料零件的成本。
文摘Hydrogenated amorphous silicon carbide （a-SixC1-x：H） films were grown on Si substrate by plasma-enhanced chemical vapor deposition. Fixed flow rate of H2 and different flow ratio of SiHJCH4 were used. Er-doped a-SixC1-x ： H （a-SixC1-x-H ：Er） films were prepared by implanting Er into the a- Si,C1-x-H host materials followed by annealing at different temperatures. The structure properties of the films were characterized by X-ray photoelectron spectroscopy （XPS）, Raman spectra. infrared absorption Photoluminescence spectra （IR） and （PL） intensities depending on flow rates and annealing temperatures were studied. High annealing temperature is not favorable for PL because of C-surface segregation. It is shown that thermal quenching of this material is small by comparing the PL intensities of a-SixC1-x-H： Er at room temperature and low temperature.
