ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO/Ga2O3 film...ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer, a scanning electron microscope, a double beam spectrophotometer and the Hall system, respectively. The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71 × 10^-3 to 1.91× 10^-3 Ω·cm as the substrate temperature increased from 100 to 350℃. ITO （22 nm）/Ga2O3 （50 nm） films deposited at 300℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm.展开更多
基金Project supported by the National Natural Science Foundation of China(No.10974077)the Natural Science Foundation of Shandong Province,China(No.2009ZRB01702)the Shandong Province Higher Educational Science and Technology Program(No.J10LA08)
文摘ITO/Ga2O3 bi-layer films were deposited on quartz glass substrates by magnetron sputtering. The effect of substrate temperature on the structure, surface morphology, optical and electrical properties of ITO/Ga2O3 films was investigated by an X-ray diffractometer, a scanning electron microscope, a double beam spectrophotometer and the Hall system, respectively. The structural characteristics showed a dependence on substrate temperature. The resistivity of the films varied from 6.71 × 10^-3 to 1.91× 10^-3 Ω·cm as the substrate temperature increased from 100 to 350℃. ITO （22 nm）/Ga2O3 （50 nm） films deposited at 300℃ exhibited a low sheet resistance of 373.3 Ω/□ and high deep ultraviolet transmittance of 78.97% at the wavelength of 300 nm.
