Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the...Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the deposition rate and nitrogen content are discussed.展开更多
文摘Carbon nitride thin films were deposited on Si(001) using unbalanced magnetron sputtering at different experimental parameters. The effects of nitrogen partial pressure, substrate temperature and substrate bias on the deposition rate and nitrogen content are discussed.
