Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of ...Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers,especially for the potential application in power devices.Moreover,Ga_(2)O_(3)material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap.These future commercial applications put forward an urgent require for high-quality epitaxial Ga_(2)O_(3)material in an efficient growth method at a lower cost.Although there are some conventional methods for single crystal Ga_(2)O_(3)film epitaxial growth such as MBE and MOCVD,these methods always need a vacuum growth environment and expensive equipment.As a fast-growing method,Mist-CVD gives the growth of Ga_(2)O_(3)in a vacuum-free,process-simple,and low-cost method,which will greatly reduce the cost and facilitate the development of Ga_(2)O_(3).This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga_(2)O_(3),recent progress in the Ga_(2)O_(3)film epitaxial growth,and various device properties based on the Mist-CVD method.Our work aims to provide help for the development of Ga_(2)O_(3)material growth and device applications.展开更多
基金supported by the National Key R&D Program of China(2022YFB3605402 and 2021YFB3601800)the Fundamental Research Funds for the Central Universities+3 种基金the National Natural Science Foundation of China(62274132,62004151,62274126,and 62174123)the Natural Science Basic Research Program of Shaanxi(2021JC24)the Innovation Capability Support Program of Shaanxi(2021TD-04)Wuhu and Xidian University Special Fund for Industry-university-research Cooperation(XWYCXY-012021001 and XWYCXY-012021006)。
基金supported by the National Key R&D Program of China(2022YFB3605402)the National Natural Science Foundation of China(62274132,62004151,62274126)+3 种基金the Key Area R&D Program of Guangdong Province(2019B010127001,2020B010170001,2020B0909030003)the Natural Science Basic Research Program of Shaanxi under Program 2021JC-24,the Key Research and Development Program of Shaanxi(2021-GY-007)the Innovation Capability Support Program of Shaanxi(2021TD-04)the Key Research and Development Program of Shaanxi(2020ZDLGY03–07).
文摘Compared with silicon,gallium nitride,silicon carbide,and other traditional semiconductors,gallium oxide(Ga_(2)O_(3))who possesses,an ultrawide bandgap of approximately 5.0 eV and a higher breakdown field strength of approximately 8 MV/cm has attracted increasing attention from researchers,especially for the potential application in power devices.Moreover,Ga_(2)O_(3)material has natural ultraviolet detection ability for photodetectors due to its ultrawide bandgap.These future commercial applications put forward an urgent require for high-quality epitaxial Ga_(2)O_(3)material in an efficient growth method at a lower cost.Although there are some conventional methods for single crystal Ga_(2)O_(3)film epitaxial growth such as MBE and MOCVD,these methods always need a vacuum growth environment and expensive equipment.As a fast-growing method,Mist-CVD gives the growth of Ga_(2)O_(3)in a vacuum-free,process-simple,and low-cost method,which will greatly reduce the cost and facilitate the development of Ga_(2)O_(3).This review has summarizes the Mist-CVD epitaxy growth mechanism of Ga_(2)O_(3),recent progress in the Ga_(2)O_(3)film epitaxial growth,and various device properties based on the Mist-CVD method.Our work aims to provide help for the development of Ga_(2)O_(3)material growth and device applications.
