Transient electronics represent an emerging class of technology comprising materials that can vanish in a controlled manner in response to stimuli. In contrast to conventional electronic devices that are designed to o...Transient electronics represent an emerging class of technology comprising materials that can vanish in a controlled manner in response to stimuli. In contrast to conventional electronic devices that are designed to operate over the longest possible period, transient electronics are defined by operation typically over a short and well-defined period; when no longer needed, transient electronics undergo self-deconstruction and disappear completely. In this work, we demonstrate the fabrication of thermally triggered transient electronic devices based on a paper substrate, specifically, a nitrocellulose paper. Nitrocellulose paper is frequently used in acts of magic because it consists of highly flammable components that are formed by nitratil^g cellulose by exposure to nitric acid. Therefore, a complete and rapid destruction of electronic devices fabricated on nitrocellulose paper is possible without producing any residue （i.e., ash）. The transience rates can be modified by controlling radio frequency signal-induced voltages that are applied to a silver （Ag） resistive heater, which is stamped on the backside of the nitrocellulose paper. The Ag resistive heater was prepared by a simple, low-cost stamping fabrication, which requires no harsh chemicals or complex thermal treatments. For the electronics on the nitrocellulose paper substrate, we employed semiconducting carbon nanotube （CNT） network channels in the transistor for superior electrical and mechanical properties.展开更多
Dopant redistribution in a silicon nanowire （SiNW） p-n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom ...Dopant redistribution in a silicon nanowire （SiNW） p-n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom side and by air on the other sides. When a high level of current flows, the inner body temperature is found to increase enough to cause dopant diffusion and even to reach the silicon melting point due to Joule heating. This experimentally observed electrothermal behavior is also validated through numerical simulation. The conductivity change is dependent on the total power density and the change becomes permanent once the device suffers self-heating beyond a threshold point. Finally, the dopant redistribution is directly visualized using scanning capacitance microscopy for the first time.展开更多
文摘Transient electronics represent an emerging class of technology comprising materials that can vanish in a controlled manner in response to stimuli. In contrast to conventional electronic devices that are designed to operate over the longest possible period, transient electronics are defined by operation typically over a short and well-defined period; when no longer needed, transient electronics undergo self-deconstruction and disappear completely. In this work, we demonstrate the fabrication of thermally triggered transient electronic devices based on a paper substrate, specifically, a nitrocellulose paper. Nitrocellulose paper is frequently used in acts of magic because it consists of highly flammable components that are formed by nitratil^g cellulose by exposure to nitric acid. Therefore, a complete and rapid destruction of electronic devices fabricated on nitrocellulose paper is possible without producing any residue （i.e., ash）. The transience rates can be modified by controlling radio frequency signal-induced voltages that are applied to a silver （Ag） resistive heater, which is stamped on the backside of the nitrocellulose paper. The Ag resistive heater was prepared by a simple, low-cost stamping fabrication, which requires no harsh chemicals or complex thermal treatments. For the electronics on the nitrocellulose paper substrate, we employed semiconducting carbon nanotube （CNT） network channels in the transistor for superior electrical and mechanical properties.
文摘Dopant redistribution in a silicon nanowire （SiNW） p-n junction is found to occur owing to self-heating effects. A SiNW is doped to form back-to-back diodes and is thermally isolated by an oxide layer on its bottom side and by air on the other sides. When a high level of current flows, the inner body temperature is found to increase enough to cause dopant diffusion and even to reach the silicon melting point due to Joule heating. This experimentally observed electrothermal behavior is also validated through numerical simulation. The conductivity change is dependent on the total power density and the change becomes permanent once the device suffers self-heating beyond a threshold point. Finally, the dopant redistribution is directly visualized using scanning capacitance microscopy for the first time.
