The lack of stable p-type van der Waals(vdW)semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle.Although p-type black phosphorus(bP)and telluriu...The lack of stable p-type van der Waals(vdW)semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle.Although p-type black phosphorus(bP)and tellurium(Te)have shown promising hole mobilities,the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues.Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride(h-BN)for high-performance p-type field-effect transistors(FETs).Importantly,the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm^(2) V^(−1) s^(−1) at room temperature,that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor(p-MOS)inverter.The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts,but also reduces the scattering centers at the interface between the channel material and the dielectric layer,thus resulting in the ultrahigh hole mobility.展开更多
基金supported by the financial supports from National Natural Science Foundation of China(Grant No.61904110)Young Teachers’Startup Fund for Scientific Research of Shenzhen University(Grant No.860-000002110426)+2 种基金the funding support from the National Natural Science Foundation of China(52122002)the Start-Up Grant(Project No.9610495)from City University of Hong KongECS scheme(City U 21201821)from the Research Grant Council of Hong Kong。
文摘The lack of stable p-type van der Waals(vdW)semiconductors with high hole mobility severely impedes the step of low-dimensional materials entering the industrial circle.Although p-type black phosphorus(bP)and tellurium(Te)have shown promising hole mobilities,the instability under ambient conditions of bP and relatively low hole mobility of Te remain as daunting issues.Here we report the growth of high-quality Te nanobelts on atomically flat hexagonal boron nitride(h-BN)for high-performance p-type field-effect transistors(FETs).Importantly,the Te-based FET exhibits an ultrahigh hole mobility up to 1370 cm^(2) V^(−1) s^(−1) at room temperature,that may lay the foundation for the future high-performance p-type 2D FET and metal-oxide-semiconductor(p-MOS)inverter.The vdW h-BN dielectric substrate not only provides an ultra-flat surface without dangling bonds for growth of high-quality Te nanobelts,but also reduces the scattering centers at the interface between the channel material and the dielectric layer,thus resulting in the ultrahigh hole mobility.
