The true integration of electronics into textiles requires the fabrication of devices directly on the fibre itself using high-performance materials that allow seamless incorporation into fabrics.Woven electronics and ...The true integration of electronics into textiles requires the fabrication of devices directly on the fibre itself using high-performance materials that allow seamless incorporation into fabrics.Woven electronics and opto-electronics,attained by intertwined fibres with complementary functions are the emerging and most ambitious technological and scientific frontier.Here we demonstrate graphene-enabled functional devices directly fabricated on textile fibres and attained by weaving graphene electronic fibres in a fabric.Capacitive touch-sensors and light-emitting devices were produced using a roll-to-roll-compatible patterning technique,opening new avenues for woven textile electronics.Finally,the demonstration of fabric-enabled pixels for displays and position sensitive functions is a gateway for novel electronic skin,wearable electronic and smart textile applications.展开更多
Quantum dot light-emitting diodes(QD-LEDs)are considered as competitive candidate for next-generation displays or lightings.Recent advances in the synthesis of core/shell quantum dots(QDs)and tailoring procedures for ...Quantum dot light-emitting diodes(QD-LEDs)are considered as competitive candidate for next-generation displays or lightings.Recent advances in the synthesis of core/shell quantum dots(QDs)and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs.Meanwhile,the charge-carrier dynamics in QD-LED devices,which constitutes the remaining core research area for further improvement of QD-LEDs,is,however,poorly understood yet.Here,we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations.The charge-carrier injection is modelled by the carrier-capturing process,while the effect of electric fields at their interfaces is considered.The simulated electro-optical characteristics of QD-LEDs,such as the luminance,current density and external quantum efficiency(EQE)curves with varying voltages,show excellent agreement with experiments.Therefore,our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.展开更多
基金support from:the European Commission(H2020-MSCA-IF-2015-704963 and FP7-ICT-2013-613024-GRASP)the European Union Erasmus+programme,the UK Engineering and Physical Sciences Research Council(EPSRC)(Grants no.EP/K017160/1,EP/K010050/1,EP/M001024/1,EP/M002438/1)+2 种基金the Royal Society international Exchanges Scheme 2016/R1,the Leverhulme Trust(Grant“Quantum Revolution”)the Portuguese Foundation for Science and Technology(FCT),co-financed by FEDER(PT2020 Partnership Agreement)under contracts IF/01088/2014,BI/UI89/2015,and POCI-01-0145-FEDER-007679(Ref.UID/CTM/50011/2013).
文摘The true integration of electronics into textiles requires the fabrication of devices directly on the fibre itself using high-performance materials that allow seamless incorporation into fabrics.Woven electronics and opto-electronics,attained by intertwined fibres with complementary functions are the emerging and most ambitious technological and scientific frontier.Here we demonstrate graphene-enabled functional devices directly fabricated on textile fibres and attained by weaving graphene electronic fibres in a fabric.Capacitive touch-sensors and light-emitting devices were produced using a roll-to-roll-compatible patterning technique,opening new avenues for woven textile electronics.Finally,the demonstration of fabric-enabled pixels for displays and position sensitive functions is a gateway for novel electronic skin,wearable electronic and smart textile applications.
基金This research was supported by the European Union under H2020 grant agreement No 685758‘1D-NEON’by the Engineering and Physical Sciences Research Council(EPSRC)project EP/P027628/1‘Smart Flexible Quantum Dot Lighting’.
文摘Quantum dot light-emitting diodes(QD-LEDs)are considered as competitive candidate for next-generation displays or lightings.Recent advances in the synthesis of core/shell quantum dots(QDs)and tailoring procedures for achieving their high quantum yield have facilitated the emergence of high-performance QD-LEDs.Meanwhile,the charge-carrier dynamics in QD-LED devices,which constitutes the remaining core research area for further improvement of QD-LEDs,is,however,poorly understood yet.Here,we propose a charge transport model in which the charge-carrier dynamics in QD-LEDs are comprehensively described by computer simulations.The charge-carrier injection is modelled by the carrier-capturing process,while the effect of electric fields at their interfaces is considered.The simulated electro-optical characteristics of QD-LEDs,such as the luminance,current density and external quantum efficiency(EQE)curves with varying voltages,show excellent agreement with experiments.Therefore,our computational method proposed here provides a useful means for designing and optimising high-performance QD-LED devices.
