Mixed-dimensional composite structures using zero-dimensional(0D)quantum dots(QDs)and two-dimensional(2D)transition metal dichalcogenides(TMDs)materials are expected to attract great interest in optoelectronics due to...Mixed-dimensional composite structures using zero-dimensional(0D)quantum dots(QDs)and two-dimensional(2D)transition metal dichalcogenides(TMDs)materials are expected to attract great interest in optoelectronics due to the potential to generate new optical properties.Here,we report on the unique optical characteristics of a devices with mixed dimensional vertically stacked structures based on tungsten diselenide(WSe_(2))/CdSeS QDs monolayer/molybdenum disulfide(MoS_(2))(2D/0D/2D).Specifically,it exhibits an ambipolar photoresponse characteristic,with a negative photoresponse observed in the 400-600 nm wavelength range and a positive photoresponse appeared at 700 nm wavelength.It resulted in the high negative responsivity of up to 52.22 mA·W^(−1)under 400 nm,which is 163 times higher than that of the photodetector without CdSeS QDs.We also demonstrated the negative photoresponse,which could be due to increased carrier collision probability and non-radiative recombination.Device modeling and simulation reveal that Auger recombination among the types of non-radiative recombination is the main cause of negative photocurrent generation.Consequently,we discovered ambipolar photoresponse near a specific wavelength corresponding to the energy of quantum dots.Our study revealed interesting phenomenon in the mixed low-dimensional stacked structure and paved the way to exploit it for the development of innovative photodetection materials as well as for optoelectronic applications.展开更多
Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)in...Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)integrated on a Si substrate using direct wafer bonding.Structure of the In As QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In_(0.53)Ga_(0.47)As,while suppressing the generation of defects due to lattice relaxations.High-performance 2.6 nm In As QW photo-FETs were successfully demonstrated with a high on/off ratio of 10~5 and a high effective mobility of 2370 cm^(2)∕(V·s).The outstanding transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times.Further,we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared(SWIR;1.0–2.5μm)near 2μm thanks to bandgap engineering through In As QW structures.Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.展开更多
基金the financial support from the KIST Institution Program(No.2E32634)Basic Science Research Program through the National Research Foundation of Korea(NRF)grant funded by the Korea government(Ministry of Science and ICT)(Nos.NRF-2017R1A2B3002307 and NRF-2016M3A7B4900135)+1 种基金Basic Science Research Program through the National Research Foundation of Korea(NRF)funded by the Ministry of Education(No.NRF-2020R1A6A3A01099388)the National R&D Program through the National Research Foundation of Korea(NRF)funded by Ministry of Science and ICT(Nos.NRF-2022M3H4A1A04074153 and RS-2023-00239634).
文摘Mixed-dimensional composite structures using zero-dimensional(0D)quantum dots(QDs)and two-dimensional(2D)transition metal dichalcogenides(TMDs)materials are expected to attract great interest in optoelectronics due to the potential to generate new optical properties.Here,we report on the unique optical characteristics of a devices with mixed dimensional vertically stacked structures based on tungsten diselenide(WSe_(2))/CdSeS QDs monolayer/molybdenum disulfide(MoS_(2))(2D/0D/2D).Specifically,it exhibits an ambipolar photoresponse characteristic,with a negative photoresponse observed in the 400-600 nm wavelength range and a positive photoresponse appeared at 700 nm wavelength.It resulted in the high negative responsivity of up to 52.22 mA·W^(−1)under 400 nm,which is 163 times higher than that of the photodetector without CdSeS QDs.We also demonstrated the negative photoresponse,which could be due to increased carrier collision probability and non-radiative recombination.Device modeling and simulation reveal that Auger recombination among the types of non-radiative recombination is the main cause of negative photocurrent generation.Consequently,we discovered ambipolar photoresponse near a specific wavelength corresponding to the energy of quantum dots.Our study revealed interesting phenomenon in the mixed low-dimensional stacked structure and paved the way to exploit it for the development of innovative photodetection materials as well as for optoelectronic applications.
基金Institute for Information and Communications Technology Promotion(2022-0-00208)National Research Foundation of Korea(2022M3F3A2A01065057,2022R1C1C1007333)Korea Institute of Science and Technology(2E32242)。
文摘Low-intensity light detection necessitates high-responsivity photodetectors.To achieve this,we report In_(0.53)Ga_(0.47)As∕In As∕In_(0.53)Ga_(0.47)As quantum well(InAs QW)photo-field-effect-transistors(photo-FETs)integrated on a Si substrate using direct wafer bonding.Structure of the In As QW channel was carefully designed to achieve higher effective mobility and a narrower bandgap compared with a bulk In_(0.53)Ga_(0.47)As,while suppressing the generation of defects due to lattice relaxations.High-performance 2.6 nm In As QW photo-FETs were successfully demonstrated with a high on/off ratio of 10~5 and a high effective mobility of 2370 cm^(2)∕(V·s).The outstanding transport characteristics in the InAs QW channel result in an optical responsivity 1.8 times greater than InGaAs photo-FETs and the fast rising/falling times.Further,we experimentally confirmed that the InAs QW photo-FET can detect light in the short-wavelength infrared(SWIR;1.0–2.5μm)near 2μm thanks to bandgap engineering through In As QW structures.Our result suggests that the InAs QW photo-FET is promising for high-responsivity and extended-range SWIR photodetector applications.