Theoretical study of a group IV p–i–n photodetector with a flat and broad response for visible and infrared detection

We report a theoretical study of a broadband Si/graded-SiGe/Ge/Ge0.9Sn0.1 p–i–n photodetector with a flat response based on modulating thickness of the layers in the active region.The responsivity of the photodetector is about 0.57 A/W in the range of 700 to 1800 nm.This structure is suitable for silicon-based epitaxial growth.Annealing is technically applied to form the graded-SiGe.The photodetector reaches a cut-off wavelength at^2300 nm and a low dark-current density under 3 V reverse bias about 0.17 mA/cm^2 is achieved theoretical at room temperature.This work is of great significance for silicon-based detection and communication,from visible to infrared.

Computational Identification of Protein-Protein Interactions in Rice Based on the Predicted Rice Interactome Network

Plant protein-protein interaction networks have not been identified by large-scale experiments. In order to better understand the protein interactions in rice, the Predicted Rice Interactome Network （PRIN; http：//bis.zju.edu.cn/ prin/） presented 76,585 predicted interactions involving 5,049 rice proteins. After mapping genomic features of rice （GO annotation, subcellular localizationprediction, and gene expression）, we found that a well-annotated and biologically significant network is rich enough to capture many significant functional linkages within higher-order biological systems, such as pathways and biological processes. Furthermore, we took MADS-box do- main-containing proteins and circadian rhythm signaling pathways as examples to demonstrate that functional protein complexes and biological pathways could be effectively expanded in our predicted network. The expanded molecular network in PRIN has considerably improved the capability of these analyses to integrate existing knowledge and provide novel insights into the function and coordination of genes and gene networks.

Electrical properties of Si/Si bonded wafers based on an amorphous Ge interlayer

An amorphous Ge（a-Ge） intermediate layer is introduced into the Si bonded interface to lower the annealing temperature and achieve good electrical characteristics. The interface and electrical characteristics of nSi/n-Si and p-Si/n-Si junctions manufactured by low-temperature wafer bonding based on a thin amorphous Ge are investigated. It is found that the bubble density tremendously decreases when the a-Ge film is not immersed in DI water. This is due to the decrease of the –OH groups. In addition, when the samples are annealed at 400 °C for20 h, the bubbles totally disappear. This can be explained by the appearance of the polycrystalline Ge（absorption of H;） at the bonded interface. The junction resistance of the n-Si/n-Si bonded wafers decreases with the increase of the annealing temperature. This is consistent with the recrystallization of the a-Ge when high-temperature annealing is conducted. The carrier transport of the Si-based PN junction annealed at 350 °C is consistent with the trap-assisted tunneling model and that annealed at 400 °C is related to the carrier recombination model.