Fluorination-mitigated high-current degradation of amorphous InGaZnO thin-film transistors

As growing applications demand higher driving currents of oxide semiconductor thin-film transistors(TFTs),severe instabilities and even hard breakdown under high-current stress(HCS)become critical challenges.In this work,the triggering voltage of HCS-induced self-heating(SH)degradation is defined in the output characteristics of amorphous indium-galliumzinc oxide(a-IGZO)TFTs,and used to quantitatively evaluate the thermal generation process of channel donor defects.The fluorinated a-IGZO(a-IGZO:F)was adopted to effectively retard the triggering of the self-heating(SH)effect,and was supposed to originate from the less population of initial deep-state defects and a slower rate of thermal defect transition in a-IGZO:F.The proposed scheme noticeably enhances the high-current applications of oxide TFTs.

Flexible perovskite light-emitting diodes for display applications and beyond

The flexible perovskite light-emitting diodes(FPeLEDs),which can be expediently integrated to portable and wearable devices,have shown great potential in various applications.The FPeLEDs inherit the unique optical properties of metal halide perovskites,such as tunable bandgap,narrow emission linewidth,high photoluminescence quantum yield,and particularly,the soft nature of lattice.At present,substantial efforts have been made for FPeLEDs with encouraging external quantum efficiency(EQE)of 24.5%.Herein,we summarize the recent progress in FPeLEDs,focusing on the strategy developed for perovskite emission layers and flexible electrodes to facilitate the optoelectrical and mechanical performance.In addition,we present relevant applications of FPeLEDs in displays and beyond.Finally,perspective toward the future development and applications of flexible PeLEDs are also discussed.

Regulating Charge and Exciton Distribution in High-Performance Hybrid White Organic Light-Emitting Diodes with n-Type Interlayer Switch

The interlayer(IL) plays a vital role in hybrid white organic light-emitting diodes(WOLEDs); however,only a negligible amount of attention has been given to n-type ILs. Herein, the n-type IL, for the first time,has been demonstrated to achieve a high efficiency, high color rendering index(CRI), and low voltage trade-off.The device exhibits a maximum total efficiency of 41.5 lm W^(-1), the highest among hybrid WOLEDs with n-type ILs. In addition, high CRIs(80–88) at practical luminances(C1000 cd m^(-2)) have been obtained, satisfying the demand for indoor lighting. Remarkably, a CRI of 88 is the highest among hybrid WOLEDs. Moreover, the device exhibits low voltages, with a turn-on voltage of only 2.5 V([1 cd m^(-2)), which is the lowest among hybrid WOLEDs. The intrinsic working mechanism of the device has also been explored; in particular, the role of n-type ILs in regulating the distribution of charges and excitons has been unveiled. The findings demonstrate that the introduction of n-type ILs is effective in developing high-performance hybrid WOLEDs.