BiSbSe_(3) is an intrinsic n-type thermoelectric material,which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure,and it exhibits excellent thermoelectric prop...BiSbSe_(3) is an intrinsic n-type thermoelectric material,which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure,and it exhibits excellent thermoelectric properties in the midtemperature region.However,there is little research on p-type BiSbSe_(3).This work realized the successful preparation of p-type BiSbSe_(3) through Pb doping.The thermoelectric transport properties of Pb-doped p-type BiSbSe_(3)were investigated.Pb doping could further reduce the thermal conductivity of BiSbSe_(3).All Pb-doped samples exhibited and maintained stable p-type transmissionthroughout the working temperature range(300-723 K).This work proves that Pb can be successfully used as a p-type dopant for BiSbSe_(3).展开更多
基金financially supported by the National Natural Science Foundation of China (Nos.52002011,51571007,and 51772012)the National Key Research and Development Program of China (No.2021YFB3201100)+4 种基金the National Key Research and Development Program of China (No.2018YFA0702100)Beijing Natural Science Foundation (No.JQ18004)111 Project (No.B17002)the National Science Fund for Distinguished Young Scholars (No.51925101)the Opening Project of State Key Laboratory of High Performance Ceramics and Superfine Microstructure (No.SKL202005SIC)。
文摘BiSbSe_(3) is an intrinsic n-type thermoelectric material,which attracts a lot of research interest due to its low lattice thermal conductivity and multiple band structure,and it exhibits excellent thermoelectric properties in the midtemperature region.However,there is little research on p-type BiSbSe_(3).This work realized the successful preparation of p-type BiSbSe_(3) through Pb doping.The thermoelectric transport properties of Pb-doped p-type BiSbSe_(3)were investigated.Pb doping could further reduce the thermal conductivity of BiSbSe_(3).All Pb-doped samples exhibited and maintained stable p-type transmissionthroughout the working temperature range(300-723 K).This work proves that Pb can be successfully used as a p-type dopant for BiSbSe_(3).
