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A Study of Microstructures in Helium-implanted 4H-SiC by RBS-channeling and TEM
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作者 ZhangChonghong SunYoumei +5 位作者 SongYing duanjinglai T.Shibayama K.Sakaguchi H.Takahashi ShenDingyu 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2002年第1期61-62,共2页
Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of... Silicon carbide is a technologically important material due to its superior mechanical and electronic properties. The understanding of defect production in helium-implanted silicon carbide is important for the vise of this material in nuclear energy devices or for the proposed getting technique of electronic devices of silicon carbide. Much less is known about helium behavior in silicon carbide than in silicon and metals. Our recent study with transmission electron microscopy (TEM) indicated that the formation behavior of helium precipitates i.e. 展开更多
关键词 氦离子注入 碳化硅晶体 显微结构 RBS沟道 透射电镜研究 TEM 串联加速器
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Defect Accumulation and Its Effect on Photoluminescence in GaN Bombarded with Low-energy Heavy Ions
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作者 ZhangChonghong SongYin +6 位作者 duanjinglai SunYoumei YaoCunfeng MaHongji NieRui T.Shibayama HongChen 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2003年第1期61-61,共1页
Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effectiv... Gallium Nitride (GaN) is an important material for the development of novel short-wave-length photonicdevices or high-frequency, high-power electronic devices. Ion implantation/irradiation was proved to be an effective method to modify the physical properties of the material. In the present work, we studied the dependence of damage accumulation on irradiation dose and temperature and the corresponding effects on photolumines cence character of the material. Specimens of GaN (n-type doping, (0001) on axis) were irradiated with 展开更多
关键词 光激发光 低能重离子 氮化镓 物理性质 短波光子学 能量光谱
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Defect Structures in 4H-SiC Irradiated with Highly-energetic ^(20)Ne^(4+) and ^(129)Xe^(26+) Ions
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作者 ZhangChonghong SunYoumei +9 位作者 T.Shibayama LiuJie WangZhiguang SongYin duanjinglai ZhaoZhiming YaoCunfeng WangYing HouMingdong JinYunfan 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2003年第1期62-63,共2页
The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior o... The study of damage evolution in silicon carbide bombarded with energetic helium ions is important for the use of this material in future fusion reactors. Heavier inert gas atoms like Ne and Xe have similar behavior of diffusion and clustering with helium, and the comparison of damage accumulation behavior between energetic helium and heavier inert gas ions can reveal important aspects of underlying mechanisms. As an extension of 展开更多
关键词 缺陷结构 放射性 高能离子 碳硅化合物 熔化作用
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RBS Analysis of Damage Evolution in Helium-implanted 4H-SiC
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作者 ZhangChonghong SongYin +4 位作者 duanjinglai SunYoumei MaHongji NieRui ShenDingyu 《近代物理研究所和兰州重离子加速器实验室年报:英文版》 2003年第1期59-60,共2页
The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM... The understanding of mechanisms of damage evolution in silicon carbide bombarded with energetic heliumions is important for the use of this material in future fusion reactors. One interesting result from our recentTEM study of defect production in helium-implanted 4H-SiC is the rather high dose threshold for the forma-tion of nanometric helium bubbles This may supply an explanation for the observed defect depleted zone near the surface of silicon carbide. While the defect depleted zone is believed to be the reason of the high resistance of SiC nanocrystals and fibers to heavy irradiation. 展开更多
关键词 4H-SIC RBS TEM
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