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High-power xenon lamp-pumped Er:YAP pulse laser operated in free-running and acousto-optical Q-switching modes
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作者 权聪 孙敦陆 +7 位作者 张会丽 罗建乔 韩志远 乔阳 陈玙威 王镇涛 程毛杰 张庆礼 《Chinese Physics B》 SCIE EI CAS CSCD 2023年第11期472-476,共5页
We demonstrate a high-energy and high-power pulse laser on a xenon lamp-pumped Er:YAP crystal. The laser performance and thermal focal lengths under different working frequencies are discussed. The results show that t... We demonstrate a high-energy and high-power pulse laser on a xenon lamp-pumped Er:YAP crystal. The laser performance and thermal focal lengths under different working frequencies are discussed. The results show that the thermal lens effect is gradually aggravated with the increase of working frequencies, and even working at 100 Hz, a single pulse energy of 234 m J can be achieved. A maximum average power of 41.5 W is achieved with a working frequency of 20 Hz and slope efficiency of 2.82%. This output power is much higher than other xenon lamp-pumped erbium laser devices.A Q-switched laser is demonstrated by using the TeO2crystal, the maximum output energies of 11.5 m J and 3.5 m J are obtained at 50 and 100 Hz, the corresponding peak powers are 93.4 k W and 17.2 kW, respectively.The laser wavelengths and beam quality factors are also characterized in the free-running and Q-switched modes. A higher pulse energy and peak power laser could be achieved further by improving the damage threshold of TeO2acousto-optical Q-switching. All the experimental results illustrate that the xenon lamp-pumped Er:YAP laser is a promising candidate for high-power and high-frequency mid-infrared laser devices. 展开更多
关键词 Er:YAP crystal xenon lamp-pumped mid-infrared laser acousto-optical Q-switching
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Basic properties of a new Nd-doped laser crystal: Nd:GdNbO4
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作者 Shoujun DING Qingli ZHANG +2 位作者 Wenpeng LIU Jianqiao LUO dunlu sun 《Frontiers of Optoelectronics》 EI CSCD 2017年第2期111-116,共6页
A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with pho... A Nd-doped GdNbO4 single crystals have been grown successfully using the Czochralski technique. The chemical etching method was employed to study the defects in the structural morphology of Nd:GdNbO4 crystal with phosphoric acid etchant. Mechanical proper- ties (such as hardness, yield strength, fracture toughness, and brittle index) of the as-grown crystal were system- atically estimated on the basis of the Vickers hardness test for the first time. The transmission spectrum of Nd: GdNbO4 was measured in the wavelength range of 320- 2400 nm at room temperature, and the absorption peaks were assigned. Results hold great significance for further research on Nd:GdNbO4. 展开更多
关键词 Nd:GdNbO4 laser crystal mechanical proper-ties chemical etching
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