ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates.A multi-target rf-sputtering system was used for the growt...ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates.A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth chamber.The nitrogen-containing films(less than 1.5 at.% of nitrogen)were n-type ZnO when deposited in oxygen-deficient Ar plasma(10%O_(2))and p-type ZnO when deposited in oxygen-rich Ar plasma(50%O_(2)).The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75-85%.The n/p ZnO homojunctions,having metallic contacts,formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage characteristics.However,the same homojunctions formed on Si_(3)N_(4)-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 V.The realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices.展开更多
基金partially supported by the EU Horizon 2020‘ASCENT’project,grant agreement No 654384(project 046)the“Materials and Processes for Energy and Environment Applications-AENAO”(MIS 5002556)project co-financed by Greece and EU(European Regional Development Fund)+1 种基金the EU's FP7/2007-2013 project“Oxide Materials Towards a Matured Post-silicon Electronics Era-ORAMA”(contract no.NMP3-LA-2010-246334)the project“Electronics Beyond Silicon Era”(ELBESIER)Erasmus+KА2 programme.
文摘ZnO-based n/p homojunctions were fabricated by sputtering from a single zinc nitride target at room temperature on metal or ITO-coated glass and Si substrates.A multi-target rf-sputtering system was used for the growth of all oxide films as multilayers in a single growth run without breaking the vacuum in the growth chamber.The nitrogen-containing films(less than 1.5 at.% of nitrogen)were n-type ZnO when deposited in oxygen-deficient Ar plasma(10%O_(2))and p-type ZnO when deposited in oxygen-rich Ar plasma(50%O_(2)).The all-oxide homojunction ITO/n-ZnO/p-ZnO/ITO/glass was fabricated in a single deposition run and exhibited visible transparency in the range of 75-85%.The n/p ZnO homojunctions,having metallic contacts,formed on conventionally processed substrates showed a fairly unstable behavior concerning the current-voltage characteristics.However,the same homojunctions formed on Si_(3)N_(4)-patterned substrates and stored in atmosphere for a period of five months were stable exhibiting a turn-on voltage of around 1.5 V.The realization of a room temperature sputtered transparent and stable ZnO homojunction paves the way to the realization of all-oxide transparent optoelectronic devices.
