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Mass Transfer: a Deciding Factor for the Multiplicity of an Event in Deep Inelastic Collisions
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作者 Tabassum Nasir J.J.Baluch +2 位作者 e.u.khan F.N.Khattak M.I.Shahzad 《Chinese Physics Letters》 SCIE CAS CSCD 2006年第10期2714-2716,共3页
Intermediate stage of the three and four-pronged events is investigated in the reaction ^208Pb+^197Au at beam energy 11.67 MeV/u. Multiprong events are analysed numerically using an empirical mass-dependent velocityr... Intermediate stage of the three and four-pronged events is investigated in the reaction ^208Pb+^197Au at beam energy 11.67 MeV/u. Multiprong events are analysed numerically using an empirical mass-dependent velocityrauge relation. Using the measured three-dimensional coordinates of correlated tracks, it is possible to determine the quantities such as mass transfer and total kinetic energy loss. These quantities are then used to study the intermediate stage of the reaction. It has been observed that mass transfer and total kinetic energy loss at the first step of the reaction decides the multiplicity of an event at the second stage of the sequential fission process. 展开更多
关键词 HEAVY-ION INTERACTION MICA TRACK DETECTORS CHANNELS FISSION U-238
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Formation of Co-implanted Silicon Ultra-Shallow Junctions for Low Thermal Budget Applications
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作者 Rehana Mustafa S.Ahmed e.u.khan 《Chinese Physics Letters》 SCIE CAS CSCD 2013年第1期127-129,共3页
We present a systematic study to create ultra-shallow junctions in n-type silicon substrates and investigate both pre-and post-annealing processes to create a processing strategy for potential applications in nano-dev... We present a systematic study to create ultra-shallow junctions in n-type silicon substrates and investigate both pre-and post-annealing processes to create a processing strategy for potential applications in nano-devices.Starting wafers were co-implanted with indium and C atoms at energies of 70 keV and 10 keV,respectively.A carefully chosen implantation schedule provides an abrupt ultra-shallow junction between 17 and 43 nm with suppressed sheet resistance and appropriate retained sheet carrier concentration at low thermal budget.A defect doping matrix,primarily the behavior and movement of co-implant generated interstitials at different annealing temperatures,may be engineered to form sufficiently activated ultra-shallow devices. 展开更多
关键词 SHALLOW ANNEALING IMPLANTATION
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Inter-relationship of Various Results in Analysis of (14.0 MeV/U) Pb+Pb Reaction Using Mica and CN-85 Track Detectors
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作者 F.N.Khattak e.u.khan +2 位作者 TabassumNasir J.J.Baluch F.U.Khan 《Chinese Physics Letters》 SCIE CAS CSCD 2005年第1期69-71,共3页
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