The structural variation and its influence on the 1/f noise of a-Si_(1-x)Ru_x thin films are investigated by Raman spectroscopy,transmission electron microscopy, and low frequency noise measurement. The Ru atoms are i...The structural variation and its influence on the 1/f noise of a-Si_(1-x)Ru_x thin films are investigated by Raman spectroscopy,transmission electron microscopy, and low frequency noise measurement. The Ru atoms are introduced into the amorphous silicon thin films by rf magnetron co-sputtering. Ru2 Si nanocrystals are found in the as-deposited samples. It is shown that the 1/f noise of the films can be reduced by a slight doping with Ru atoms. Moreover, both the microstructure and the 1/f noise performance of a-Si_(1-x)Ru_x thin films could be improved through a high-temperature annealing treatment.展开更多
This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN w...This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61421002the China Scholarship Council under Grant No 201506070075
文摘The structural variation and its influence on the 1/f noise of a-Si_(1-x)Ru_x thin films are investigated by Raman spectroscopy,transmission electron microscopy, and low frequency noise measurement. The Ru atoms are introduced into the amorphous silicon thin films by rf magnetron co-sputtering. Ru2 Si nanocrystals are found in the as-deposited samples. It is shown that the 1/f noise of the films can be reduced by a slight doping with Ru atoms. Moreover, both the microstructure and the 1/f noise performance of a-Si_(1-x)Ru_x thin films could be improved through a high-temperature annealing treatment.
文摘This paper studies the amplitude of random telegraph noise （RTN） caused by a single trap in the sili- con film of ultra-thin buried oxide （UTBOX） silicon-on-insulator （SOl） devices. The film-defect-related RTN was identified and analyzed by low frequency noise measurement and time domain measurement. Emphasis is on the relative amplitude AID/ID, which is studied in the function of the front-gate, the back-gate and the drain-to-source biases. Interesting asymmetric or symmetric VDS dependence of switched source and drain are observed and sup- ported by calibrated Sentaurus simulations. It is believed the asymmetry of the VDs dependence of the switched source and drain is related to the lateral trap position along the source and drain.
