The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping,...The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.展开更多
文摘The possibility of building of clusters of impurity atoms of Ni in silicon and controlling their parameters is currently investigated in the present research article. Our group develops a special technique for doping, the so-called “low-temperature doping” of semiconductors. This method of doping is based upon the diffusion process which is carried out in stages by gradually increasing temperature ranging from room temperature to the diffusion temperature.
