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Plasma effects on the bacteria Escherichia coli via two evaluation methods
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作者 Danijela VUJO?EVI? Uro? CVELBAR +8 位作者 Ur?ka REPNIK Martina MODIC Sa?a LAZOVI? Tina ZAVA?NIK-BERGANT Nevena PUA? Boban MUGO?A evangelos gogolides Zoran Lj PETROVI? Miran MOZETI? 《Plasma Science and Technology》 SCIE EI CAS CSCD 2017年第7期102-109,共8页
The degradation of Escherichia coli bacteria by treatment with cold, weakly ionised, highly dissociated oxygen plasma, with an electron temperature of 3 eV, a plasma density of 8 × 10^15 m^-3 and a neutral oxygen... The degradation of Escherichia coli bacteria by treatment with cold, weakly ionised, highly dissociated oxygen plasma, with an electron temperature of 3 eV, a plasma density of 8 × 10^15 m^-3 and a neutral oxygen atom density of 3.5 × 10^21 m^-3 was studied. To determine the 'real' plasma effects, two methods were used for evaluation and determination, as well as a comparison of the number of bacteria that had survived: the standard plate count technique (PCT) and advanced fluorescence-activated cell sorting (FACS). Bacteria were deposited onto glass substrates and kept below 50 ℃ during the experiments with oxygen plasma. The results showed that the bacteria had fully degraded after about 2 min of plasma treatment, depending slightly on the amount of bacteria that had been deposited on the substrates. The very precise determination of the O flux on the substrates and the two-method comparison allowed for the determination of the critical dose of oxygen atoms required for the destruction of a bacterial cell wall--about 6 × 10^24 m^-2--as well as deactivation of the substrates--about 8 × 10^25 m^-2. These results were taken in order to discuss other results obtained by comparable studies and scientific method evaluations in the determination of plasma effects on bacteria. 展开更多
关键词 oxygen plasma BACTERIA DEGRADATION PCT FACS
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A non-lithographic plasma nanoassembly technology for polymeric nanodot and silicon nanopillar fabrication
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作者 Athanasios Smyrnakis Angelos Zeniou +2 位作者 Kamil Awsiuk Vassilios Constantoudis evangelos gogolides 《Frontiers of Chemical Science and Engineering》 SCIE EI CAS CSCD 2019年第3期475-484,共10页
In this work, we present plasma etching alone as a directed assembly method to both create the nanodot pattern on an etched polymeric (PMMA) film and transfer it to a silicon substrate for the fabrication of silicon n... In this work, we present plasma etching alone as a directed assembly method to both create the nanodot pattern on an etched polymeric (PMMA) film and transfer it to a silicon substrate for the fabrication of silicon nanopillars or cone-like nanostructuring. By using a shield to control sputtering from inside the plasma reactor, the size and shape of the resulting nanodots can be better controlled by varying plasma parameters as the bias power. The effect of the shield on inhibitor deposition on the etched surfaces was investigated by time-of-flight secondary ion mass spectroscopy (ToF-SIMS) measurements. The fabrication of quasi-ordered PMMA nanodots of a diameter of 25 nm and period of 54 nm is demonstrated. Pattern transfer to the silicon substrate using the same plasma reactor was performed in two ways:(a) a mixed fluorine-fluorocarbon-oxygen nanoscale etch plasma process was employed to fabricate silicon nanopillars with a diameter of 25 nm and an aspect ratio of 5.6, which show the same periodicity as the nanodot pattern, and (b) high etch rate cryogenic plasma process was used for pattern transfer. The result is the nanostructuring of Si by high aspect ratio nanotip or nanocone-like features that show excellent antireflective properties. 展开更多
关键词 PLASMA nanoassembly etching NANODOTS NANOPILLARS nanofabrication
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