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Simulation analysis of a high efficiency GaInP/Si multijunction solar cell
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作者 M.Benaicha L.Dehimi +1 位作者 F.Pezzimenti f.bouzid 《Journal of Semiconductors》 EI CAS CSCD 2020年第3期54-58,共5页
The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithi... The solar power conversion efficiency of a gallium indium phosphide(GaInP)/silicon(Si)tandem solar cell has been investigated by means of a physical device simulator considering both mechanically stacked and monolithic structures.In particular,to interconnect the bottom and top sub-cells of the monolithic tandem,a gallium arsenide(GaAs)-based tunnel-junction,i.e.GaAs(n+)/GaAs(p+),which assures a low electrical resistance and an optically low-loss connection,has been considered.The J–V characteristics of the single junction cells,monolithic tandem,and mechanically stacked structure have been calculated extracting the main photovoltaic parameters.An analysis of the tunnel-junction behaviour has been also developed.The mechanically stacked cell achieves an efficiency of 24.27%whereas the monolithic tandem reaches an efficiency of 31.11%under AM1.5 spectral conditions.External quantum efficiency simulations have evaluated the useful wavelength range.The results and discussion could be helpful in designing high efficiency monolithic multijunction GaInP/Si solar cells involving a thin GaAs(n+)/GaAs(p+)tunnel junction. 展开更多
关键词 GaInP/Si tandem solar cells power efficiency numerical simulations
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