Optical properties of GaN-based light-emitting diodes(LEDs)are studied numerically by using AlGaN and InAlN electron-blocking layers(EBLs).Through the simulations of emission spectra,carrier concentration distribution...Optical properties of GaN-based light-emitting diodes(LEDs)are studied numerically by using AlGaN and InAlN electron-blocking layers(EBLs).Through the simulations of emission spectra,carrier concentration distribution,energy band,electrostatic field,internal quantum efficiency and output power,the results show that the LEDs with design of the InAlN EBL structure have a better performance over the original LEDs using an AlGaN EBL.The spectrum intensity and output power are enhanced significantly,and the efficiency droop of internal quantum efficiency is improved effectively with this design of InAlN EBL structure.It is proved that the strengths of carrier confinement and electron leakage current play a critical role in the performance of luminescence in LEDs.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61176043Fund for Strategic and Emerging Industries of Guangdong Province under Grant No 2010A081002005+2 种基金Cooperation Project in Industry,University and Institution of Guangdong Province and Ministry of Education under Grant No 2010B090400192the Project of Combination of Production and Research Guided by Ministry in 2009 under Grant No 2009B090300338the Project of Combination of Production and Research Guided by Ministry in 2010 under Grant No 2010B090400192.
文摘Optical properties of GaN-based light-emitting diodes(LEDs)are studied numerically by using AlGaN and InAlN electron-blocking layers(EBLs).Through the simulations of emission spectra,carrier concentration distribution,energy band,electrostatic field,internal quantum efficiency and output power,the results show that the LEDs with design of the InAlN EBL structure have a better performance over the original LEDs using an AlGaN EBL.The spectrum intensity and output power are enhanced significantly,and the efficiency droop of internal quantum efficiency is improved effectively with this design of InAlN EBL structure.It is proved that the strengths of carrier confinement and electron leakage current play a critical role in the performance of luminescence in LEDs.
