High T_(c) superconducting YBCO films have been fabricated by in-situ pulsed laser ablation method.The substrates used were SrTiO_(3)(100)and were heated to 650℃ during deposition.X-ray diffraction results indicate t...High T_(c) superconducting YBCO films have been fabricated by in-situ pulsed laser ablation method.The substrates used were SrTiO_(3)(100)and were heated to 650℃ during deposition.X-ray diffraction results indicate that the as-deposited 6lms are highly oriented with c-axis perpendicular to the film surfaces.The critical currents were measured at 77.5 K under different magnetic fields from 0 up to 7 T by using dc four point method.The zero resistance temperature was 89 K and the highest critical current density was 2.5 × 10^(6) A/cm^(2) at 77.5 K under zero field.展开更多
A systemic process study on an electron beam nanolithography system operating at 100kV was pre-sent.The exposure conditions were optimized for resist ZEP520A.Grating structures with line/space of 50nm/50nm were obtain...A systemic process study on an electron beam nanolithography system operating at 100kV was pre-sent.The exposure conditions were optimized for resist ZEP520A.Grating structures with line/space of 50nm/50nm were obtained in a reasonably thick resist which is beneficial to the subsequent pattern transfer technique.The ICP etching process conditions was optimized.The role of etching parameters such as source power,gas pressure,and gas flow rate on the etching result was also discussed.A grating structure with line widths as small as 100nm,duty cycles of 0.5,depth of 900nm,and the side-wall scalloping as small as 5nm on a silicon substrate was obtained.The silicon deep etching technique for structure sizes smaller than 100nm is very important for the fabrication of nano-optical devices working in the visible regime.展开更多
With increasing excitation wavelength from 514 to 782 nm, a significant difference in the Raman spectra of SiC nanorods was observed as compared to bulk material. The intensity ratio of the LO mode to that of the IF m...With increasing excitation wavelength from 514 to 782 nm, a significant difference in the Raman spectra of SiC nanorods was observed as compared to bulk material. The intensity ratio of the LO mode to that of the IF mode increases with the excitation wavelength increasing. This has been identified as resonant Raman scattering caused by Frohlich interaction.展开更多
文摘High T_(c) superconducting YBCO films have been fabricated by in-situ pulsed laser ablation method.The substrates used were SrTiO_(3)(100)and were heated to 650℃ during deposition.X-ray diffraction results indicate that the as-deposited 6lms are highly oriented with c-axis perpendicular to the film surfaces.The critical currents were measured at 77.5 K under different magnetic fields from 0 up to 7 T by using dc four point method.The zero resistance temperature was 89 K and the highest critical current density was 2.5 × 10^(6) A/cm^(2) at 77.5 K under zero field.
基金Supported by the National Basic Research Program of China("973" Program)(Grant No.2007CB935301)
文摘A systemic process study on an electron beam nanolithography system operating at 100kV was pre-sent.The exposure conditions were optimized for resist ZEP520A.Grating structures with line/space of 50nm/50nm were obtained in a reasonably thick resist which is beneficial to the subsequent pattern transfer technique.The ICP etching process conditions was optimized.The role of etching parameters such as source power,gas pressure,and gas flow rate on the etching result was also discussed.A grating structure with line widths as small as 100nm,duty cycles of 0.5,depth of 900nm,and the side-wall scalloping as small as 5nm on a silicon substrate was obtained.The silicon deep etching technique for structure sizes smaller than 100nm is very important for the fabrication of nano-optical devices working in the visible regime.
基金supported by he National Natural Science Foundation of China(Grant Nos.69476037,17774009 and 69876001)the State Commission of Science and Technology.
文摘With increasing excitation wavelength from 514 to 782 nm, a significant difference in the Raman spectra of SiC nanorods was observed as compared to bulk material. The intensity ratio of the LO mode to that of the IF mode increases with the excitation wavelength increasing. This has been identified as resonant Raman scattering caused by Frohlich interaction.
