A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs i...A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs islands are asymmetrical along the two<110>directions on the(001)growth plane.Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the Ⅲ-Ⅳ compound semiconductors.展开更多
The damage removal and strain relaxation in the As^(+)-implanted Si_(0.57)Ge_(0.43) epilayers were studied by double-crystal x-ray diffractornetry and transmission electron microscopy.The results presented in this pap...The damage removal and strain relaxation in the As^(+)-implanted Si_(0.57)Ge_(0.43) epilayers were studied by double-crystal x-ray diffractornetry and transmission electron microscopy.The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950℃ results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.展开更多
Diffusion of implanted As ion in relaxed Si_(1-x)Ge_(x) was studied as a function of Ge content over a wide range of Ge fractions(0-43%) and annealing temperature,and was compared to diffusion in Si.Experimental resul...Diffusion of implanted As ion in relaxed Si_(1-x)Ge_(x) was studied as a function of Ge content over a wide range of Ge fractions(0-43%) and annealing temperature,and was compared to diffusion in Si.Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No.69576026。
文摘A 10-InAs-island-layer vertically coupled quantum dot structure on(001)GaAs was grown and investigated by molecular beam epitaxy and transmission electron microscopy.The result shows that the vertically aligned InAs islands are asymmetrical along the two<110>directions on the(001)growth plane.Such an asymmetry in the vertically coupled quantum dot structure can be explained with the chemical polarity in the Ⅲ-Ⅳ compound semiconductors.
文摘The damage removal and strain relaxation in the As^(+)-implanted Si_(0.57)Ge_(0.43) epilayers were studied by double-crystal x-ray diffractornetry and transmission electron microscopy.The results presented in this paper indicate that rapid thermal annealing at temperatures higher than 950℃ results in complete removal of irradiation damage accompained by the formation of GeAs precipitates which enhance the removal process of dislocations.
基金Supported by the National Natural Science Foundation of China.
文摘Diffusion of implanted As ion in relaxed Si_(1-x)Ge_(x) was studied as a function of Ge content over a wide range of Ge fractions(0-43%) and annealing temperature,and was compared to diffusion in Si.Experimental results showed that the As diffusion is enhanced with increasing annealing temperature for certain Ge content and strongly dependent on the higher Ge content and the faster As diffusion.
