4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent ...4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent rapid thermal annealing.The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.展开更多
文摘4.2MeV ^(7)Li channeling technique,laser Raman scattering spectrometry,and TEM have been utilized to study the regrowth of MBE-GaAs films of〜μm thick on Si substrates by Si^(+) implantation(0.6-2.6MeV)and subsequent rapid thermal annealing.The results showed that crystalline disorder was greatly reduced in the recrystalized layers especially at the interface.
