This paper presents the design and implementation of a fully integrated low noise multi-band LC-tank voltage-controlled-oscillator （VCO）. Multi-band operation is achieved by using switched-capacitor resonator. Addit...This paper presents the design and implementation of a fully integrated low noise multi-band LC-tank voltage-controlled-oscillator （VCO）. Multi-band operation is achieved by using switched-capacitor resonator. Additional three-bit binary weighted capacitor array is also used to extend frequency tuning range in each band. To lower phase noise, two noise filters are added and a linear varactor is adopted. Implemented in a 0.18 ~tm complementary-metal- oxide-semiconductor （CMOS） process, the VCO achieves a frequency tuning range covering 2.26-2.48 GHz, 2.48- 2.78 GHz, 2.94-3.38 GHz, and 3.45-4.23 GHz while occupies a chip area of 0.52 mm2. With a 1.8 V power supply, it draws a current of 10.9 mA, 10.6 mA, 8.8 mA, and 6.2 mA from the lowest band to the highest band respectively. The measured phase noise is - 109-- 120 dBc/Hz and - 121-- 131 dBc/Hz at a 1 MHz and 2.5 MHz offset from the carrier, respectively.展开更多
基金supported by the Project of the State Key Development Program for Basic Research of China(2010CB327404)
文摘This paper presents the design and implementation of a fully integrated low noise multi-band LC-tank voltage-controlled-oscillator （VCO）. Multi-band operation is achieved by using switched-capacitor resonator. Additional three-bit binary weighted capacitor array is also used to extend frequency tuning range in each band. To lower phase noise, two noise filters are added and a linear varactor is adopted. Implemented in a 0.18 ~tm complementary-metal- oxide-semiconductor （CMOS） process, the VCO achieves a frequency tuning range covering 2.26-2.48 GHz, 2.48- 2.78 GHz, 2.94-3.38 GHz, and 3.45-4.23 GHz while occupies a chip area of 0.52 mm2. With a 1.8 V power supply, it draws a current of 10.9 mA, 10.6 mA, 8.8 mA, and 6.2 mA from the lowest band to the highest band respectively. The measured phase noise is - 109-- 120 dBc/Hz and - 121-- 131 dBc/Hz at a 1 MHz and 2.5 MHz offset from the carrier, respectively.
