An Electroluminescent device with PVK film doped with Eu(TTA) 3 Phen and PBD was fabricated. The device structure of glass substrate/indium tin oxide/PPV/PVK∶ Eu(TTA) 3 Phen∶PBD/Alq 3/Al was employed. A sharply...An Electroluminescent device with PVK film doped with Eu(TTA) 3 Phen and PBD was fabricated. The device structure of glass substrate/indium tin oxide/PPV/PVK∶ Eu(TTA) 3 Phen∶PBD/Alq 3/Al was employed. A sharply red electroluminescence with a maximum luminance of 56.8 cd/m 2 at 48 V was achieved.展开更多
文摘An Electroluminescent device with PVK film doped with Eu(TTA) 3 Phen and PBD was fabricated. The device structure of glass substrate/indium tin oxide/PPV/PVK∶ Eu(TTA) 3 Phen∶PBD/Alq 3/Al was employed. A sharply red electroluminescence with a maximum luminance of 56.8 cd/m 2 at 48 V was achieved.
