Identification of lncRNAs Associated withβ-conglycininα-null Allele Based on a Genome-wide Transcriptome Analysis ofα-null-type Hypoallergenic Soybean(Glycine max)Near-isogenic Lines

Soybean mutants withα-nullβ-conglycinin are associated with high nutritional value and low allergenic risk.Although long noncoding RNAs(lncRNAs)are increasingly recognized as functional regulatory components affecting eukaryotic gene expression,little is known about lnc RNA profiles inα-null-type hypoallergenic soybeans.In this study,a genome-wide integrative analysis of lncRNAs,m RNAs and epigenomic data in the soybean cgy-2(confirmedα-null)near-isogenic line(NIL)and its recurrent parent Dongnong47(DN47)was conducted.Nineteen novel lncRNAs that were differentially expressed(DE)only in the NIL at 18 days after flowering(i.e.,α-null-associated DE lncRNAs)were delected.Sixteen putative soybean stress-responsive lncRNAs were identified,and observed to regulate 257 stress-related genes DE in the NIL.This result indicated that theα-null allele might represent an intrinsic defect stress that altered the expression of various stress-related genes inα-null-type hypoallergenic soybean.Additionally,25 epigenetic-related lncRNAs regulated 831 DE epigenetic-related genes and simultaneously initiated multiple epigenetic activities,including ubiquitination,methylation and acetylation.Kyoto encyclopedia of genes and genomes(KEGG)analysis indicated that the biosynthesis of amino acids pathway was enriched with 83 DE genes regulated by nine DE lncRNAs.Changes in the expression of these lncRNAs and genes might be the reason for the altered amino acid composition in the NIL.Among all detected DE lncRNAs,MSTRG.12518 was the most conspicuousα-null-specific cis/trans-lnc RNA that played an efficient,versatile and vital role in the NIL.The data indicated that the lnc RNA profile differed between the NIL and DN47.Variations in lncRNAs,gene expression levels and DNA methylation states likely contributed to the intrinsic defect stress response mechanism inα-null-type hypoallergenic soybeans.

A High Figure-of-Merit SOI MOSFET with a Double-Sided Charge Oxide-Trench

A novel silicon-on-insulator(SOI)metal-oxide-semiconductor field effect transistor(MOSFET)with a high figure of merit(FOM)is proposed.The device features a double-sided charge oxide-trench(DCT)and a trench gate extended to the buried oxide.First,the oxide trench causes multiple-dimensional depletion in the drift region,which not only improves the electric field(E-field)strength,but also enhances the reduced surface field effect.Second,self-adaptive charges are collected in the DCT,which enhances the E-field strength of the trench oxide.Third,the oxide trench folds the drift region along the vertical direction,reducing the device cell pitch.Fourth,one side of the DCT regions acts as the body contact of p-well to reduce cell pitch and specific on-resistance(R_(on,sp))further.Compared with a trench gate lateral double-diffused MOSFET,the DCT MOSFET increases the breakdown voltage(BV)from 53 V to 158 V at the same cell pitch of 3.5μm,or reduces the cell pitch by 60%and Ron,sp by 70%at the same BV.The FOM(FOM=BV^(2)/Ron,sp)of the proposed structure is 23 MW/cm^(2).