Dielectric and energy storage properties of PbOSrO-Na_(2)O-Nb_(2)O_(5)-SiO_(2)(PSNNS) thin films with annealing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and ...Dielectric and energy storage properties of PbOSrO-Na_(2)O-Nb_(2)O_(5)-SiO_(2)(PSNNS) thin films with annealing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and hysteresis loops.The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm^(-3),respectively,which is obtained in the sample with annealing temperature of 800 ℃.Annealed from 700 to800 ℃,the dielectric constant and energy storage performance of PSNNS films are continuously improved.However,with annealing temperature up to 850 ℃,their dielectric constant decreases,which might be related with the removal of interfacial defects as a function of annealing temperature.Defect is one of the causes of space charge phenomenon,resulting in the increase in dielectric constant.Moreover,the micro structure analysis by X-ray diffraction(XRD) and transmission electron microscope(TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.展开更多
基金financially supported by the National Natural Science Foundation of China (No.51477012)Beijing Nova Program (No.xx2016046)。
文摘Dielectric and energy storage properties of PbOSrO-Na_(2)O-Nb_(2)O_(5)-SiO_(2)(PSNNS) thin films with annealing temperature from 700 to 850 ℃ were investigated by measuring their capacitance-electric filed curve and hysteresis loops.The results show that the highest dielectric constant and energy density are 81.2 and 17.0 J·cm^(-3),respectively,which is obtained in the sample with annealing temperature of 800 ℃.Annealed from 700 to800 ℃,the dielectric constant and energy storage performance of PSNNS films are continuously improved.However,with annealing temperature up to 850 ℃,their dielectric constant decreases,which might be related with the removal of interfacial defects as a function of annealing temperature.Defect is one of the causes of space charge phenomenon,resulting in the increase in dielectric constant.Moreover,the micro structure analysis by X-ray diffraction(XRD) and transmission electron microscope(TEM) indicates that the change of crystallization phase and interfacial polarization takes responsibility to the results.
