A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is proposed.The introduction of a p-GaN island redistributes the electric field in the gate–drain cha...A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is proposed.The introduction of a p-GaN island redistributes the electric field in the gate–drain channel region,thereby promoting the formation of electronic domains in the two-dimensional electron gas(2DEG)channel.The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software.Simulation results show that the 0.2µm gate HEMT with a PIBL structure having a p-GaN island doping concentration(Np)of 2.5×10^(18)cm^(−3)–3×10^(18)cm^(−3)can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage(V_(gs))of 0.6 V.As the distance(D_(p))between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm,the fundamental frequency decreases from 377 GHz to 344 GHz,as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_(f1)/I_(avg) ranging from 2.4%to 3.84%.展开更多
基金Project supported by the National Natural Science Foundation of China(Grant Nos.61974108 and 61674117)the National Natural Science Foundation for Young Scholars of China(Grants No.61804119)the Postdoctoral Science Foundation of China(Grants No.2018M643576)。
文摘A GaN-based high electron mobility transistor(HEMT)with p-GaN islands buried layer(PIBL)for terahertz applications is proposed.The introduction of a p-GaN island redistributes the electric field in the gate–drain channel region,thereby promoting the formation of electronic domains in the two-dimensional electron gas(2DEG)channel.The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software.Simulation results show that the 0.2µm gate HEMT with a PIBL structure having a p-GaN island doping concentration(Np)of 2.5×10^(18)cm^(−3)–3×10^(18)cm^(−3)can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage(V_(gs))of 0.6 V.As the distance(D_(p))between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm,the fundamental frequency decreases from 377 GHz to 344 GHz,as well as the ratio of oscillation current amplitude of the fundamental component to the average component I_(f1)/I_(avg) ranging from 2.4%to 3.84%.
