High performance Ga N-based hybrid white micro-LEDs integrated with quantum-dots

Hybrid white micro-pillar structure light emitting diodes(LEDs)have been manufacture utilizing blue micro-LEDs arrays integrated with 580 nm CIS((CuInS2-ZnS)/ZnS)core/shell quantum dots.The fabricated hybrid white micro-LEDs have good electrical properties,which are manifested in relatively low turn-on voltage and reverse leakage current.High-quality hybrid white light emission has been demonstrated by the hybrid white micro-LEDs after a systemic optimization,in which the corresponding color coordinates are calculated to be(0.3303,0.3501)and the calculated color temperature is 5596 K.This result indicates an effective way to achieve high-performance white LEDs and shows great promise in a large range of applications in the future including micro-displays,bioinstrumentation and visible light communication.

High-efficiency green micro-LEDs with GaN tunnel junctions grown hybrid by PA-MBE and MOCVD

We fabricated p-i-n tunnel junction(TJ)contacts for hole injection on c-plane green micro-light-emitting diodes(micro-LEDs)by a hybrid growth approach using plasma-assisted molecular beam epitaxy(PA-MBE)and metal–organic chemical vapor deposition(MOCVD).The TJ was formed by an MBE-grown ultra-thin unintentionally doped In Ga N polarization layer and an n^(++)∕n^(+)-GaN layer on the activated p^(++)-Ga N layer prepared by MOCVD.This hybrid growth approach allowed for the realization of a steep doping interface and ultrathin depletion width for efficient inter-band tunneling.Compared to standard micro-LEDs,the TJ micro-LEDs showed a reduced device resistance,enhanced electroluminescence intensity,and a reduced efficiency droop.The size-independent J-V characteristics indicate that TJ could serve as an excellent current spreading layer.All these results demonstrated that hybrid TJ contacts contributed to the realization of high-performance micro-LEDs with long emission wavelengths.