Organic-inorganic hybrid hole transport layers with SnS doping boost the performance of perovskite solar cells

Perovskite solar cells(PSCs) have demonstrated excellent photovoltaic performance which currently rival the long-standing silicon solar cells’ efficiency. However, the relatively poor device operational stability of PSCs still limits their future commercialization. Binary sulfide is a category of materials with promising optoelectrical properties, which shows the potential to improve both the efficiency and stability of PSCs.Here we demonstrate that the inorganic tin monosulfide(Sn S) can be an efficient dopant in 2,2’,7,7’-tet rakis(N,N-di-p-methoxy-phenylamine)-9,9’-spirobifluorene(spiro-OMe TAD) to form a composite hole transport layer(HTL) for PSCs. Sn S nanoparticles(NPs) synthesized through a simple chemical precipitation method exhibit good crystallization and suitable band matching with the perovskites. The introduction of Sn S NPs in Spiro-OMTAD HTLs enhanced charge extraction, reduced trap state density, and shallowed trap state energy level of the devices based on the composite HTLs. Therefore, the resulting solar cells employing Sn S-doped spiro-OMe TAD HTLs delivered an improved stabilized power output efficiency of 21.75% as well as enhanced long-term stability and operational stability. Our results provide a simple method to modify the conventional spiro-OMe TAD and obtain PSCs with both high efficiency and good stability.

Manipulating the morphology of CdS/Sb_(2)S_(3) heterojunction using a Mg-doped tin oxide buffer layer for highly efficient solar cells

Antimony sulfide(Sb_(2)S_(3))is an appealing semiconductor as light absorber for solar cells due to its high absorption coefficient,appropriate band gap(~1.7 e V)and abundance of constituent elements.However,power conversion efficiency(PCE)of Sb_(2)S_(3)-based solar cells still lags much behind the theoretically predicted due to the imperfect energy level alignment at the charge transporting layer/Sb_(2)S_(3)interfaces and hence severe charge recombination.Herein,we insert a high-temperature sintered magnesium(Mg)-doped tin oxide(SnO_(2))layer between cadmium sulfide(Cd S)and fuorine doped tin oxide to form a cascaded energy level alignment and thus mitigate interfacial charge recombination.Simultaneously,the inserted Mg-doped Sn O_(2)buffer layer facilitates the growth of the neibouring Cd S film with orientation followed by Sb_(2)S_(3)film with larger grains and fewer pinholes.Consequently,the resultant Sb_(2)S_(3)solar cells with Mg-doped SnO_(2)deliver a champion PCE of 6.31%,22.8%higher than those without a buffer layer.Our work demonstrates that deliberate absorber growth as well as efficient hole blocking upon an appropriate buffer layer is viable in obtaining solution-processed Sb_(2)S_(3)solar cells with high performance.

Unveiling the key factor affecting the illumination deterioration and response measures for lead halide perovskite solar cells

So far,it's been widely acknowledged that the Pb I2decomposition under illumination mainly accounts for the degradation of perovskite solar cells(PSCs)under maximum power point(MPP)tracking condition.However,PSCs without excess Pb I2were also reported to deteriorate rapidly under the same condition.Here,we demonstrate that the key to enhance PSCs stability under MPP tracking condition is not to have fascinating surface morphology with effective suppression of nonradiative recombination traps but to prevent the migration of iodine ion(I-)under light illumination.By partially substituting methylammonium chloride(MACl)with methylammonium iodide(MAI)and simutaneouly introducing I2during the sequential deposition,the iodine vacancies in perovskite films are substantially suppressed,thereby limiting the pathways for I^(-)migration.As a consequence,PSCs with efficiency of 24.28%are fabricated with remarkably enhanced working stability.