Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of twod imensional semiconductors like molybdenum disulfide(MoS_(2)).Although several theoretical works predicted tha...Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of twod imensional semiconductors like molybdenum disulfide(MoS_(2)).Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS_(2),a direct experimental verification is still missing in the literature.Here we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer substrate.We used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS_(2)flakes finding a redshift of the excitonic features at a rate between-40 meV/%and-110 meV/%of biaxial tension.We also directly compare the effect of biaxi al and uniaxial strain on the same single-layer MoS_(2)finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one.展开更多
Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS_(2),MoSe_(2),WS_(2) and WSe_(2).In this work we provide a thorough description of the technical de...Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS_(2),MoSe_(2),WS_(2) and WSe_(2).In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy.We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2) and WSe_(2).Finally,we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS_(2) flakes.展开更多
基金funding from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation programme (grant agreement n° 755655, ERC-St G 2017 project 2D-TOPSENSE)the support from the Spanish Ministry of Economy, Industry and Competitiveness through a Juan de la Cierva-formación fellowship 2017 FJCI2017-32919.
文摘Strain engineering has arisen as a powerful technique to tune the electronic and optical properties of twod imensional semiconductors like molybdenum disulfide(MoS_(2)).Although several theoretical works predicted that biaxial strain would be more effective than uniaxial strain to tune the band structure of MoS_(2),a direct experimental verification is still missing in the literature.Here we implemented a simple experimental setup that allows to apply biaxial strain through the bending of a cruciform polymer substrate.We used the setup to study the effect of biaxial strain on the differential reflectance spectra of 12 single-layer MoS_(2)flakes finding a redshift of the excitonic features at a rate between-40 meV/%and-110 meV/%of biaxial tension.We also directly compare the effect of biaxi al and uniaxial strain on the same single-layer MoS_(2)finding that the biaxial strain gauge factor is 2.3 times larger than the uniaxial strain one.
基金This project has received funding from the European Research Council(ERC)under the European Union’s Horizon 2020 research and innovation programme(grant agreement no 755655,ERC-StG 2017 project 2D-TOPSENSE)R.F.acknowledges the support from the Spanish Ministry of Economy,Industry and Competitiveness through a Juan de la Cierva-formación fellowship 2017 FJCI-2017-32919.H.L.acknowledges the grant from China Scholarship Council(CSC)under No.201907040070.
文摘Strain is a powerful tool to modify the optical properties of semiconducting transition metal dichalcogenides like MoS_(2),MoSe_(2),WS_(2) and WSe_(2).In this work we provide a thorough description of the technical details to perform uniaxial strain measurements on these two-dimensional semiconductors and we provide a straightforward calibration method to determine the amount of applied strain with high accuracy.We then employ reflectance spectroscopy to analyze the strain tunability of the electronic properties of single-,bi-and tri-layer MoS_(2),MoSe_(2),WS_(2) and WSe_(2).Finally,we quantify the flake-to-flake variability by analyzing 15 different single-layer MoS_(2) flakes.
