For a characteristic c-ray with interlaced overlap peak, and the case where its reliable and credible net count cannot be obtained using the current high-purity germanium(HPGe) multichannel γ-ray spectrum software, t...For a characteristic c-ray with interlaced overlap peak, and the case where its reliable and credible net count cannot be obtained using the current high-purity germanium(HPGe) multichannel γ-ray spectrum software, two new methods are proposed herein to obtain the γ-ray net peak count from the interlaced overlap peak in the HPGe cray spectrometer system, of which one is the symmetric conversion method based on Gaussian distribution and the other is where the energy average value of two close γ-rays is regarded as the γ-ray energy. The experimental results indicate that the two methods mentioned above are reliable and credible. This study is significant for the development of better γ-ray spectrum processing software for measuring complex γ-ray spectra concerning the nuclear reaction cross section, neutron activation analysis, and analysis of transuranium elements, using an HPGe detector.展开更多
The cross sections for the^(63)Cu(n,a)^(60(m+g))Co,^(65)Cu(n,2 n)^(64)Cu, and ^(65)Cu(n,p)^(65)Ni reactions have been studied in the neutron energy range of 13.5–14.8 MeV using the activation technique. The neutron b...The cross sections for the^(63)Cu(n,a)^(60(m+g))Co,^(65)Cu(n,2 n)^(64)Cu, and ^(65)Cu(n,p)^(65)Ni reactions have been studied in the neutron energy range of 13.5–14.8 MeV using the activation technique. The neutron beams were produced via the^3 H(d,n)~4 He reaction. The neutron energies of different directions in the measurements were determined beforehand by the method of cross section ratios for the^(90)Zr(n,2 n)^(89 m+g)Zr and ^(93)Nb(n,2 n)^(92 m)Nb reactions. The results in the present work were discussed and compared with measurement results found in the literatures.展开更多
Nanowires have recently attracted more attention because of their low-dimensional structure, tunable optical and electrical properties for next-generation nanoscale optoelectronic devices. Cd S nanowire array, which i...Nanowires have recently attracted more attention because of their low-dimensional structure, tunable optical and electrical properties for next-generation nanoscale optoelectronic devices. Cd S nanowire array, which is(002)-orientation growth and approximately perpendicular to Cd foil substrate, has been fabricated by the solvothermal method. In the temperature-dependent photoluminescence, from short wavelength to long wavelength, four peaks can be ascribed to the emissions from the bandgap, the transition from the holes being bound to the donors or the electrons being bound to the acceptors, the transition from Cd interstitials to Cd vacancies, and the transition from S vacancies to the valence band,respectively. In the photoluminescence of 10 K, the emission originated from the bandgap appears in the form of multiple peaks. Two stronger peaks and five weaker peaks can be observed. The energy differences of the adjacent peaks are close to 38 me V, which is ascribed to the LO phonon energy of Cd S. For the multiple peaks of bandgap emission, from low energy to high energy, the first, second, and third peaks are contributed to the third-order, second-order, and first-order phonon replica of the free exciton A, respectively;the fourth peak is originated from the free exciton A;the fifth peak is contributed to the first-order phonon replica of the excitons bound to neutral donors;the sixth and seventh peaks are originated from the excitons bound to neutral donors and the light polarization parallel to the c axis of hexagonal Cd S, respectively.展开更多
Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunc...Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.展开更多
New experimental cross-section data for the^180 W(n,2 n)^179 mW,^186 W(n,2 n)185 mW and186 W(n,p)186 Ta reactions at the neutron energies of 13.5 and 14.4 MeV are obtained by the activation technique. The neutron beam...New experimental cross-section data for the^180 W(n,2 n)^179 mW,^186 W(n,2 n)185 mW and186 W(n,p)186 Ta reactions at the neutron energies of 13.5 and 14.4 MeV are obtained by the activation technique. The neutron beams are produced by means of the3 H(d,n)4 He reaction. The gamma activities of the product nuclei are measured by a high-resolution gamma-ray spectrometer with a coaxial high-purity germanium detector. The neutron fluence is determined using the monitor reaction^93 Nb(n,2 n)^92 mNb. The results in the current work are discussed and compared with the measurement results found in the literature. It is shown that these higher accuracy experimental cross-section data around the neutron energy of 14 MeV agree with some previous experimental values from the literature within experimental uncertainties.展开更多
基金supported by the National Natural Science Foundation of China(Nos.11575090,11605099)the Young Key Teachers Training Program of He’nan Higher Education in China(No.2015GGJS-258)
文摘For a characteristic c-ray with interlaced overlap peak, and the case where its reliable and credible net count cannot be obtained using the current high-purity germanium(HPGe) multichannel γ-ray spectrum software, two new methods are proposed herein to obtain the γ-ray net peak count from the interlaced overlap peak in the HPGe cray spectrometer system, of which one is the symmetric conversion method based on Gaussian distribution and the other is where the energy average value of two close γ-rays is regarded as the γ-ray energy. The experimental results indicate that the two methods mentioned above are reliable and credible. This study is significant for the development of better γ-ray spectrum processing software for measuring complex γ-ray spectra concerning the nuclear reaction cross section, neutron activation analysis, and analysis of transuranium elements, using an HPGe detector.
基金supported by the National Natural Science Foundation of China(Nos.11575090 and 11605099)the Young Key Teachers Training Porgram of He’nan Higher Education in China(No.2015GGJS-258)
文摘The cross sections for the^(63)Cu(n,a)^(60(m+g))Co,^(65)Cu(n,2 n)^(64)Cu, and ^(65)Cu(n,p)^(65)Ni reactions have been studied in the neutron energy range of 13.5–14.8 MeV using the activation technique. The neutron beams were produced via the^3 H(d,n)~4 He reaction. The neutron energies of different directions in the measurements were determined beforehand by the method of cross section ratios for the^(90)Zr(n,2 n)^(89 m+g)Zr and ^(93)Nb(n,2 n)^(92 m)Nb reactions. The results in the present work were discussed and compared with measurement results found in the literatures.
基金Project supported by the Natural Science Foundation of Henan Province,China(Grant No.202300410304)Key Research Project for Science and Technology of the Education Department of Henan Province,China(Grant No.21A140021)。
文摘Nanowires have recently attracted more attention because of their low-dimensional structure, tunable optical and electrical properties for next-generation nanoscale optoelectronic devices. Cd S nanowire array, which is(002)-orientation growth and approximately perpendicular to Cd foil substrate, has been fabricated by the solvothermal method. In the temperature-dependent photoluminescence, from short wavelength to long wavelength, four peaks can be ascribed to the emissions from the bandgap, the transition from the holes being bound to the donors or the electrons being bound to the acceptors, the transition from Cd interstitials to Cd vacancies, and the transition from S vacancies to the valence band,respectively. In the photoluminescence of 10 K, the emission originated from the bandgap appears in the form of multiple peaks. Two stronger peaks and five weaker peaks can be observed. The energy differences of the adjacent peaks are close to 38 me V, which is ascribed to the LO phonon energy of Cd S. For the multiple peaks of bandgap emission, from low energy to high energy, the first, second, and third peaks are contributed to the third-order, second-order, and first-order phonon replica of the free exciton A, respectively;the fourth peak is originated from the free exciton A;the fifth peak is contributed to the first-order phonon replica of the excitons bound to neutral donors;the sixth and seventh peaks are originated from the excitons bound to neutral donors and the light polarization parallel to the c axis of hexagonal Cd S, respectively.
基金Project supported by the Natural Science Foundation of Henan Province,China(Grant No.202300410304)the Key Research Project for Science and Technology of the Education Department of Henan Province,China(Grant No.21A140021)。
文摘Shortening the distance between the depletion region and the electrodes to reduce the trapped probability of carriers is a useful approach for improving the performance of heterojunction.The CdS/Si nanofilm heterojunctions are fabricated by using the radio frequency magnetron sputtering method to deposit the amorphous silicon nanofilms and Cd S nanofilms on the ITO glass in turn.The relation of current density to applied voltage(I-V)shows the obvious rectification effect.From the analysis of the double logarithm I-V curve it follows that below~2.73 V the electron behaviors obey the Ohmic mechanism and above~2.73 V the electron behaviors conform to the space charge limited current(SCLC)mechanism.In the SCLC region part of the traps between the Fermi level and conduction band are occupied,and with the increase of voltage most of the traps are occupied.It is believed that Cd S/Si nanofilm heterojunction is a potential candidate in the field of nano electronic and optoelectronic devices by optimizing its fabricating procedure.
基金Supported by the National Natural Science Foundation of China under Grant Nos 11605099 and 11575090
文摘New experimental cross-section data for the^180 W(n,2 n)^179 mW,^186 W(n,2 n)185 mW and186 W(n,p)186 Ta reactions at the neutron energies of 13.5 and 14.4 MeV are obtained by the activation technique. The neutron beams are produced by means of the3 H(d,n)4 He reaction. The gamma activities of the product nuclei are measured by a high-resolution gamma-ray spectrometer with a coaxial high-purity germanium detector. The neutron fluence is determined using the monitor reaction^93 Nb(n,2 n)^92 mNb. The results in the current work are discussed and compared with the measurement results found in the literature. It is shown that these higher accuracy experimental cross-section data around the neutron energy of 14 MeV agree with some previous experimental values from the literature within experimental uncertainties.