Experiment and simulation on degradation and burnout mechanisms of SiC MOSFET under heavy ion irradiation

Experiments and simulation studies on 283 MeV I ion induced single event effects of silicon carbide(SiC) metal–oxide–semiconductor field-effect transistors(MOSFETs) were carried out. When the cumulative irradiation fluence of the SiC MOSFET reached 5×10^(6)ion·cm^(-2), the drain–gate channel current increased under 200 V drain voltage, the drain–gate channel current and the drain–source channel current increased under 350 V drain voltage. The device occurred single event burnout under 800 V drain voltage, resulting in a complete loss of breakdown voltage. Combined with emission microscope, scanning electron microscope and focused ion beam analysis, the device with increased drain–gate channel current and drain–source channel current was found to have drain–gate channel current leakage point and local source metal melt, and the device with single event burnout was found to have local melting of its gate, source, epitaxial layer and substrate. Combining with Monte Carlo simulation and TCAD electrothermal simulation, it was found that the initial area of single event burnout might occur at the source–gate corner or the substrate–epitaxial interface, electric field and current density both affected the lattice temperature peak. The excessive lattice temperature during the irradiation process appeared at the local source contact, which led to the drain–source channel damage. And the excessive electric field appeared in the gate oxide layer, resulting in drain–gate channel damage.

Brassinosteroids promote seed development and physiological maturity of oilseed rape (Brassica napus L.)

Long developmental stage and late harvest time of winter rapeseed (Brassica napus L.) have great negative effects on rice planting of rice-rapeseed farming system in China. Early maturity improvement of rapeseed is necessary. ‘Zhongshuang 11’, an elite winter rapeseed cultivar, was used in consecutive field experiments during 2010-2012. At initial flowering stage, plants were consecutively sprayed with 0.1 mg/L 2-4-Epibrassinolide(BR) for 3 d. Two hundred sampling pods from different plants were randomly collected to measure seed related indexes with a 4 d interval from 7 to 47 d after peak anthesis (DAPA).Seed color turned light brown at 31 or 35 DAPA after BR treatment, seed dry weight (DWT)was increased while seed moisture content (SMC) was decreased during seed development.DWT almost reached the maximum value when SMC was 33.20% at 31 DAPA in 2010-2011 and 35.29% at 35 DAPA in 2011-2012 growing season after BR treatment. Similarly,the maximum values of standard germination test (SGT), accelerated aging test (AAT)and cold test (CT) were observed at 31 or 35 DAPA after BR treatment respectively. The high yield and seed oil content appeared at 31 or 35 DAPA accompanied with rapid decrease in total non-structural carbohydrate (TNC) in stems and leaves. Our study indicated that BR application advanced maturity of winter rapeseed by 4 to 8 days.

纳米器件空间辐射效应机理和模拟试验技术研究进展

电子器件空间辐射效应是影响航天器在轨长期可靠运行的重要因素之一,一直是国际上抗辐射加固技术领域研究的热点和难点.高可靠、高集成度、高性能、低功耗、低成本是未来新一代先进电子系统发展的必然要求,采用更高性能的抗辐射加固纳米器件是必然的趋势.本文在深入调研国内外研究现状的基础上,分析了纳米器件辐射效应面临的新问题.纳米工艺存在着很多不同于大尺寸工艺的特点,沟道长度缩小到十几个纳米,栅氧化层等效厚度小于1 nm.在工艺上引入了纵向逆掺杂阱或横向晕环掺杂技术,以降低栅极诱导漏极漏电效应;在材料上引入了多元半导体材料、应变硅、锗硅、高k栅介质、金属栅极等,以降低器件功耗;在结构上引入了三维Fin FET结构,以增强栅的控制能力.这种趋于物理极限的工艺特点、新材料和新结构的采用产生了许多新的辐射效应现象和机制,模拟试验技术更加复杂,给抗辐射加固技术研究带来了新的挑战.本文综述了纳米器件辐射效应的研究现状和趋势,重点针对28 nm及以下特征工艺纳米器件辐射效应研究及模拟试验的需求,提出了需要研究的科学问题和关键技术,希望能为纳米器件抗辐射加固与空间应用提供参考.

液态二氧化碳置换整形甲烷水合物过程特性

通过可视化水合物反应装置和影像设备,研究了注入液态CO2分解CH4水合物同时原位生成气体水合物并保持整块水合物结构稳定的完整过程,验证了水合物分解和生成同时进行的第二类原位置换过程的可行性.通过控制压力实现在CO2-CH4混合水合物四相区（水合物-水-液相-气相）的CH4置换过程,得到富CH4气体产物.通过分析气相色谱和测定产气量得到CH4产气特性和CO2对CH4水合物的置换率.结果表明,低压有利于获得较优的置换效果,4.5 MPa下的置换过程较5 MPa时产气量提高14.6%,甲烷水合物置换率提高13.7%.

Syntenic quantitative trait loci and genomic divergence for Sclerotinia resistance and ?owering time in Brassica napus

Oilseed rape(Brassica napus) is an allotetraploid with two subgenomes descended from a common ancestor. Accordingly, its genome contains syntenic regions with many duplicate genes, some of which may have retained their original functions, whereas others may have diverged. Here, we mapped quantitative trait loci(QTL) for stem rot resistance(SRR), a disease caused by the fungus Sclerotinia sclerotiorum, and flowering time(FT) in a recombinant inbred line population. The population was genotyped using B.napus 60 K single nucleotide polymorphism arrays and phenotyped in six(FT) and nine(SSR) experimental conditions or environments. In total, we detected 30 SRR QTL and 22 FT QTL and show that some of the major QTL associated with these two traits were co-localized,suggesting a genetic linkage between them. Two SRR QTL on chromosome A2 and two on chromosome C2 were shown to be syntenic, suggesting the functional conservation of these regions. We used the syntenic properties of the genomic regions to exclude genes for selection candidates responsible for QTL-associated traits. For example, 152 of the 185 genes could be excluded from a syntenic A2–C2 region. These findings will help to elucidate polyploid genomics in future studies, in addition to providing useful information for B. napus breeding programs.

Enhanced reversibility of the magnetoelastic transition in(Mn,Fe)2(P,Si)alloys via minimizing the transition-induced elastic strain energy

Magnetocaloric materials undergoing reversible phase transitions are highly desirable for magnetic refrigeration applications.(Mn,Fe)_(2)(P,Si)alloys exhibit a giant magnetocaloric effect accompanied by a magnetoelastic transition,while the noticeable irreversibility causes drastic degradation of the magnetocaloric properties during consecutive cooling cycles.In the present work,we performed a comprehensive study on the magnetoelastic transition of the(Mn,Fe)_(2)(P,Si)alloys by high-resolution transmission electron microscopy,in situ field-and temperature-dependent neutron powder diffraction as well as density functional theory calculations(DFT).We found a generalized relationship between the thermal hysteresis and the transition-induced elastic strain energy for the(Mn,Fe)_(2)(P,Si)family.The thermal hysteresis was greatly reduced from 11 to 1 K by a mere 4 at.%substitution of Fe by Mo in the Mn_(1.15)Fe_(0.80)P_(0.45)Si_(0.55)alloy.This reduction is found to be due to a strong reduction in the transition-induced elastic strain energy.The significantly enhanced reversibility of the magnetoelastic transition leads to a remarkable improvement of the reversible magnetocaloric properties,compared to the parent alloy.Based on the DFT calculations and the neutron diffraction experiments,we also elucidated the underlying mechanism of the tunable transition temperature for the(Mn,Fe)_(2)(P,Si)family,which can essentially be attributed to the strong competition between the covalent bonding and the ferromagnetic exchange coupling.The present work provides not only a new strategy to improve the reversibility of a first-order magnetic transition but also essential insight into the electron-spin-lattice coupling in giant magnetocaloric materials.

Large,low-field and reversible magnetostrictive effect in MnCoSi-based metamagnet at room temperature

TiNiSi-type MnCoSi-based alloys show large magnetostriction during the magnetic-field-induced metamagnetic transition.However,the high critical field required to drive the transition directly hinders their potential applications.In this work,we systematically investigate the tricritical behavior and magnetostrictive effect in substituted MnCoSi alloys.Replacing Si with Sb or In,Co with Fe or Cu,and Mn with Co,which can simultaneously reduce the critical field and the temperature of tricritical point,are explored.Among the substituted MnCoSi alloys,Mn_(0.983)Co_(1.017)Si displays a temperature of a tricritical point of 250 K and a room-temperature critical field of 0.60 T,which is the lowest up to now.Profited from these optimizations,a large reversible magnetostrictive effect under low field is successfully realized at room temperature.In a field of 1 T,the magnetostriction of Mn_(0.983)Co_(1.017)Si alloy is close to 1000 ppm.Besides,a strong relation between critical field and valence electron concentration is revealed in the transition-metal-substituted MnCoSi alloys.Our work greatly enhances the low-field magnetostrictive performance of MnCoSi-based alloys and make them be of interest in potential applications.

Effect of Nb Content on Microstructure and Mechanical Properties of Mo_(0.25)V_(0.25)Ti_(1.5)Zr_(0.5)Nbx High-Entropy Alloys

High-entropy alloys(HEAs)have significant application prospects as promising candidate materials for nuclear industry due to their excellent mechanical properties,corrosion resistance and irradiation resistance.In this work,the Mo_(0.25)V_(0.25)Ti_(1.5)Zr_(0.5)Nb_(x)(x=0,0.25,0.5,0.75 and 1.0)HEAs were designed and fabricated.The alloys were prepared by vacuum arc melting,and all the ingots were annealed at 1200℃ for 24 h.The microstructures,crystal structures,hardness and mechanical properties of Mo_(0.25)V_(0.25)Ti_(1.5)Zr_(0.5)Nb_(x) HEAs were investigated.The as-cast alloys are composed of single BCC phase.Moreover,the single BCC phase is retained after annealing at 1200℃ for 24 h.The compressive and microhardness tests show that the strength and hardness of the alloys decrease gradually with the increase of Nb content,while the plasticity increases and the fracture mode of the alloy changes from brittle fracture to ductile fracture,which is mainly owing to the decrease of grain size.The addition of Nb significantly improves the plasticity of the Mo_(0.25)V_(0.25)Ti_(1.5)Zr_(0.5)Nb_(x) alloys.In particular,Nb1.0 alloy can reach 28.32%strain without fracture,which exhibits promising potential in industrial application.

Origin of abnormal high pressure and its relationship with hydrocarbon accumulation in the Dina 2 Gas Field, Kuqa Depression

Based on distribution of formation pressure by indirect estimation and formation testing,this study investigates origin of abnormal high pressure in the Dina 2 Gas Field in the Kuqa Depression in combination with the latest research findings.Contribution of major overpressure mechanisms to this gas field is estimated,and generation of the abnormal high pressure as well as its relationship with natural gas accumulation is explored.Disequilibrium compaction,tectonic stress,and overpressure transfer are the major overpressure mechanisms.Overpressure transfer resulted from vertical opening of faults and folding is the most important cause for the overpressure.Gas accumulation and abnormal high pressure generation in the reservoirs of the Dina 2 Gas Field show synchroneity.During the early oil-gas charge in the Kangcun stage,the reservoirs were generally normal pressure systems.In the Kuqa deposition stage,rapid deposition caused disequilibrium compaction and led to generation of excess pressure(approximately 5-10 MPa)in the reservoirs.During the Kuqa Formation denudation stage to the Quaternary,reservoir overpressure was greatly increased to approximately 40-50 MPa as a result of vertical pressure transfer by episodic fault activation,lateral overpressure transfer by folding and horizontal tectonic stress due to intense tectonic compression.The last stage was the major period of ultra-high pressure generation and gas accumulation in the Dina 2 Gas Field.