The fascinating properties of two-dimensional （2D） crystals have gainedincreasing interest for many applications. The synthesis of a 2D silicon structure,namely silicene, is attracting great interest for possible de...The fascinating properties of two-dimensional （2D） crystals have gainedincreasing interest for many applications. The synthesis of a 2D silicon structure,namely silicene, is attracting great interest for possible development of nextgeneration electronic devices. The main difficulty in working with siliceneremains its strong tendency to oxidation when exposed to air as a consequenceof its relatively highly buckled structure. In this work, we univocaUy identifythe Raman mode of air-stable low-buckled silicene nanosheets synthesized onhighly oriented pyrolytic graphite （HOPG） located at 542.5 cm-1. The main focusof this work is Raman spectroscopy and mapping analyses in combination withab initio calculations. Scanning tunneling microscopy images reveal the presenceof a patchwork of Si three-dimensional （3D） clusters and contiguous Si areaspresenting a honeycomb atomic arrangement, rotated by 30° with respect to theHOPG substrate underneath, with a lattice parameter of 0.41±0.02 nm and abuckling of the Si atoms of 0.05 nm. Raman analysis supports the co-existenceof 3D silicon clusters and 2D silicene. The Raman shift of low-buckled siliceneon an inert substrate has not been reported so far and it is completely differentfrom the one calculated for free-standing silicene and the ones measured forsilicene grown on Ag（111） surfaces. Our experimental results are perfectlyreproduced by our ab initio calculations of deposited silicene nanosheets. Thisleads us to conclude that the precise value of the observed Raman shift crucially depends on the strain between the silicene and the HOPG substrate.展开更多
文摘The fascinating properties of two-dimensional （2D） crystals have gainedincreasing interest for many applications. The synthesis of a 2D silicon structure,namely silicene, is attracting great interest for possible development of nextgeneration electronic devices. The main difficulty in working with siliceneremains its strong tendency to oxidation when exposed to air as a consequenceof its relatively highly buckled structure. In this work, we univocaUy identifythe Raman mode of air-stable low-buckled silicene nanosheets synthesized onhighly oriented pyrolytic graphite （HOPG） located at 542.5 cm-1. The main focusof this work is Raman spectroscopy and mapping analyses in combination withab initio calculations. Scanning tunneling microscopy images reveal the presenceof a patchwork of Si three-dimensional （3D） clusters and contiguous Si areaspresenting a honeycomb atomic arrangement, rotated by 30° with respect to theHOPG substrate underneath, with a lattice parameter of 0.41±0.02 nm and abuckling of the Si atoms of 0.05 nm. Raman analysis supports the co-existenceof 3D silicon clusters and 2D silicene. The Raman shift of low-buckled siliceneon an inert substrate has not been reported so far and it is completely differentfrom the one calculated for free-standing silicene and the ones measured forsilicene grown on Ag（111） surfaces. Our experimental results are perfectlyreproduced by our ab initio calculations of deposited silicene nanosheets. Thisleads us to conclude that the precise value of the observed Raman shift crucially depends on the strain between the silicene and the HOPG substrate.
