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Enhanced resonance frequency in Co2FeAl thin film with different thicknesses grown on flexible graphene substrate
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作者 周偲 袁少康 +8 位作者 朱登玉 白宇明 王韬 刘福福 潘禄禄 冯存芳 张博涵 何大平 汪胜祥 《Chinese Physics B》 SCIE EI CAS CSCD 2024年第3期618-622,共5页
The flexible materials exhibit more favorable properties than most rigid substrates in flexibility,weight saving,mechanical reliability,and excellent environmental toughness.Particularly,flexible graphene film with un... The flexible materials exhibit more favorable properties than most rigid substrates in flexibility,weight saving,mechanical reliability,and excellent environmental toughness.Particularly,flexible graphene film with unique mechanical properties was extensively explored in high frequency devices.Herein,we report the characteristics of structure and magnetic properties at high frequency of Co2FeAl thin film with different thicknesses grown on flexible graphene substrate at room temperature.The exciting finding for the columnar structure of Co2FeAl thin film lays the foundation for excellent high frequency property of Co2FeAl/flexible graphene structure.In-plane magnetic anisotropy field varying with increasing thickness of Co2FeAl thin film can be obtained by measurement of ferromagnetic resonance,which can be ascribed to the enhancement of crystallinity and the increase of grain size.Meanwhile,the resonance frequency which can be achieved by the measurement of vector network analyzer with the microstrip method increases with increasing thickness of Co2FeAl thin film.Moreover,in our case with graphene film,the resonance magnetic field is quite stable though folded for twenty cycles,which demonstrates that good flexibility of graphene film and the stability of high frequency magnetic property of Co2FeAl thin film grown on flexible graphene substrate.These results are promising for the design of microwave devices and wireless communication equipment. 展开更多
关键词 enhanced resonance frequency magnetic resonance field flexible graphene substrate
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Electric-field-induced in-plane effective 90°magnetization rotation in Co2FeAl/PMN-PT structure
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作者 Cai Zhou Dengyu Zhu +5 位作者 fufu liu Cunfang Feng Mingfang Zhang Lei Ding Mingyao Xu Shengxiang Wang 《Chinese Physics B》 SCIE EI CAS CSCD 2021年第5期639-643,共5页
The in-plane effective 90°magnetization rotation of Co_(2) FeAl thin film grown on PMN-PT substrate induced by the electric field is investigated at room temperature.The magnetic hysteresis loops under different ... The in-plane effective 90°magnetization rotation of Co_(2) FeAl thin film grown on PMN-PT substrate induced by the electric field is investigated at room temperature.The magnetic hysteresis loops under different positive and negative electric fields are obtained,which reveals remanent magnetization can be mediated by the electric field.Moreover,under positive electric fields,the obvious 90°magnetization rotation can be observed,while remanent magnetization is nearly unchanged under negative electric fields.The result is consistent with the electric field dependence of effective magnetic field,which can be attributed to the piezostrain effect in Co_(2) FeAl/PMN-PT structure.In addition,the piezostrain-mediated 90°magnetization rotation can be demonstrated by the result of resonance field changing with electric field in the measurement of ferromagnetic resonance,which is promising for the design of future multiferroic devices. 展开更多
关键词 electric field 90° magnetization rotation Co_(2)FeAl/PMN-PT structure
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Low Voltage Reversible Manipulation of Ferromagnetic Resonance Response in CoFeB/HfO2 Heterostructures
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作者 Yangping Wang Hongyan Zhou +2 位作者 Yibing Zhao fufu liu Changjun Jiang 《Chinese Physics Letters》 SCIE CAS CSCD 2020年第12期86-89,共4页
We report that the ferromagnetic resonance(FMR)response of the CoFeB/HfO2 heterostructures is stabilized and reversibly manipulated by ionic gel.Ionic gel with excellent flexibility is used as a medium to form an elec... We report that the ferromagnetic resonance(FMR)response of the CoFeB/HfO2 heterostructures is stabilized and reversibly manipulated by ionic gel.Ionic gel with excellent flexibility is used as a medium to form an electric field.When a 4 V gate voltage is applied,the resonance field Hr and peak-to-peak linewidthΔHpp at different angles are regulated.Whenθ=20°,the Hr is regulated up to 82 Oe.Whenθ=70°,ΔHpp is tuned up to 75 Oe.When the gate voltage is repeatedly applied,the FMR spectra can be freely switched between the initial state and the gated state.Our study provides an effective method to manipulate the damping of the magnetic film stably and reversibly. 展开更多
关键词 field. state. magnetic
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