期刊文献+
共找到1篇文章
< 1 >
每页显示 20 50 100
Modifying the Power and Performance of 2-Dimensional MoS_(2)Field Effect Transistors 被引量:6
1
作者 fulin zhuo Jie Wu +6 位作者 Binhong Li Moyang Li Chee Leong Tan Zhongzhong Luo Huabin Sun Yong Xu Zhihao Yu 《Research》 SCIE EI CSCD 2023年第3期741-756,共16页
Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet o... Over the past 60 years,the semiconductor industry has been the core driver for the development of information technology,contributing to the birth of integrated circuits,Internet,artificial intelligence,and Internet of Things.Semiconductor technology has been evolving in structure and material with co-optimization of performance–power–area–cost until the state-of-the-art sub-5-nm node.Two-dimensional(2D)semiconductors are recognized by the industry and academia as a hopeful solution to break through the quantum confinement for the future technology nodes.In the recent 10 years,the key issues on 2D semiconductors regarding material,processing,and integration have been overcome in sequence,making 2D semiconductors already on the verge of application.In this paper,the evolution of transistors is reviewed by outlining the potential of 2D semiconductors as a technological option beyond the scaled metal oxide semiconductor field-effect transistors.We mainly focus on the optimization strategies of mobility(μ),equivalent oxide thickness(EOT),and contact resistance(RC),which enables high ON current(Ion)with reduced driving voltage(Vdd).Finally,we prospect the semiconductor technology roadmap by summarizing the technological development of 2D semiconductors over the past decade. 展开更多
关键词 OVERCOME driving enable
原文传递
上一页 1 下一页 到第
使用帮助 返回顶部