A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band di...A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band dispersion is described by the simplified Kane model. Numerical simulation shows that with an increase in the total electron concentration, thermodynamic density of states at low temperatures changes abruptly and smoothes jumps at high temperatures. This change manifests itself in the peculiar thermodynamic characteristics. The results are used to interpret existing experimental data.展开更多
The analysis of the density of states for electrons in single quantum well, the conduction band nonparabolicity take is account. It is shown that the degree of conduction band nonparabolicity pronounces depending on t...The analysis of the density of states for electrons in single quantum well, the conduction band nonparabolicity take is account. It is shown that the degree of conduction band nonparabolicity pronounces depending on the energy density of states. With increasing temperature, a step change in the density of states smoothes and at high temperatures is completely blurred. Nonparabolicity dispersion law manifests itself in a wide range of temperatures. Calculations are carried out for the example of the quantum wells in InAs and InSb.展开更多
The temperature dependence of the density of states in strong magnetic fields. On the basis of the model constructed, a computer program calculating the density of electronic states in a quantizing magnetic field. Use...The temperature dependence of the density of states in strong magnetic fields. On the basis of the model constructed, a computer program calculating the density of electronic states in a quantizing magnetic field. Used new, based on quantum statistics, the approach to the calculation of the temperature dependence of the density of states in a strong magnetic field. Mathematical modeling of the density of states using the experimental values of a continuous density of states makes it possible to calculate the Landau levels.展开更多
The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves ins...The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.展开更多
With the help of mathematical models, the temperature dependence of the density of energy states was determined in a quantizing magnetic field. The influence of the effective mass at the temperature dependence of the ...With the help of mathematical models, the temperature dependence of the density of energy states was determined in a quantizing magnetic field. The influence of the effective mass at the temperature dependence of the density of the energy states in a strong quantizing magnetic field is investigated. The dependence temperature of density of energy states graph is obtained in a strong magnetic field for InSb.展开更多
The temperature dependence of the magnetic susceptibility oscillations semiconductors was considered in a quantizing magnetic field. With the help of mathematical modeling of the thermal broadening of the energy level...The temperature dependence of the magnetic susceptibility oscillations semiconductors was considered in a quantizing magnetic field. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the de Haas-van Alphen effect in quantizing magnetic field was investigated. The influence of temperature on the de Haas-van Alphen with the help of free energy of electrons ?in semiconductors was determined. Theoretical results of the mathematical simulation were compared with experimental data for bismuth. Using the proposed model of the low-temperature?, high-temperature oscillation magnetic susceptibility in semiconductors was calculated.展开更多
It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long-wave edge of the fundamental absorption. With the help of mathematical mod...It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long-wave edge of the fundamental absorption. With the help of mathematical modeling, it shows that the thermal broadening of the energy states of the conduction band and the discrete states in the band gap can cause long-wave decline according to the Urbach rule.展开更多
文摘A thermodynamic density of states, electron density in the subband and the entropy of the gas as function of the temperature and the total two-dimensional electron density are studied. Semiconductor conduction band dispersion is described by the simplified Kane model. Numerical simulation shows that with an increase in the total electron concentration, thermodynamic density of states at low temperatures changes abruptly and smoothes jumps at high temperatures. This change manifests itself in the peculiar thermodynamic characteristics. The results are used to interpret existing experimental data.
文摘The analysis of the density of states for electrons in single quantum well, the conduction band nonparabolicity take is account. It is shown that the degree of conduction band nonparabolicity pronounces depending on the energy density of states. With increasing temperature, a step change in the density of states smoothes and at high temperatures is completely blurred. Nonparabolicity dispersion law manifests itself in a wide range of temperatures. Calculations are carried out for the example of the quantum wells in InAs and InSb.
文摘The temperature dependence of the density of states in strong magnetic fields. On the basis of the model constructed, a computer program calculating the density of electronic states in a quantizing magnetic field. Used new, based on quantum statistics, the approach to the calculation of the temperature dependence of the density of states in a strong magnetic field. Mathematical modeling of the density of states using the experimental values of a continuous density of states makes it possible to calculate the Landau levels.
文摘The paper deals with the heating of electrons and current rectification in contact, which is located in an alternating electromagnetic field. It was found that the electrical component of the microwave (UHF) waves inside the p-n-junction was curved. This leads to the perpendicular component of the electric field of the microwave wave. This component modulates the height of the potential barrier with the frequency of the microwave. In the p-n-junction, straightening microwave current occurs. It is shown that the rectifying contact in the microwave electromagnetic field is always an electromotive force. This is due to carrier heating and straightening microwave current. It is shown that electron heating and straightening of the microwave power will lead to higher ideality factor of the diode.
文摘With the help of mathematical models, the temperature dependence of the density of energy states was determined in a quantizing magnetic field. The influence of the effective mass at the temperature dependence of the density of the energy states in a strong quantizing magnetic field is investigated. The dependence temperature of density of energy states graph is obtained in a strong magnetic field for InSb.
文摘The temperature dependence of the magnetic susceptibility oscillations semiconductors was considered in a quantizing magnetic field. With the help of mathematical modeling of the thermal broadening of the energy levels, the temperature dependence of the de Haas-van Alphen effect in quantizing magnetic field was investigated. The influence of temperature on the de Haas-van Alphen with the help of free energy of electrons ?in semiconductors was determined. Theoretical results of the mathematical simulation were compared with experimental data for bismuth. Using the proposed model of the low-temperature?, high-temperature oscillation magnetic susceptibility in semiconductors was calculated.
文摘It is invited statistical explanation of the frequency and temperature dependence of the absorption coefficients of semiconductors on the long-wave edge of the fundamental absorption. With the help of mathematical modeling, it shows that the thermal broadening of the energy states of the conduction band and the discrete states in the band gap can cause long-wave decline according to the Urbach rule.
