A new laser-plasma deposition method has been developed for the plasma chemical deposition of hard silicon carbonitride coatings on stainless steel substrates from the hexamethyldisilazane (HMDS) Si<sub><span...A new laser-plasma deposition method has been developed for the plasma chemical deposition of hard silicon carbonitride coatings on stainless steel substrates from the hexamethyldisilazane (HMDS) Si<sub><span style="font-size:12px;font-family:Verdana;">2</span></sub><span style="font-family:Verdana;">NH(CH</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-family:Verdana;">)</span><sub><span style="font-size:12px;font-family:Verdana;">6</span></sub><span style="font-family:Verdana;"> vapor in a high-speed Ar and Ar</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">+</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">10 vol.% He gas stream at the HMDS gas flow activation after the laser beam focus. The method allows depositing silicon carbonitride coatings at the rate of 0.4</span><span style="font-family:Verdana;"> - </span><span style="font-family:;" "=""><span style="font-family:Verdana;">1.2 μm·min</span><sup><span style="font-size:12px;font-family:Verdana;">-1</span></sup><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">i.e.</span></i><span style="font-family:Verdana;"> ~2 times higher than that at introducing HMDS in the laser beam focus zone. The properties of the prepared coatings have been studied by the methods of IR and Raman spectroscopy, atomic force microscopy, nanoindentation and X-ray diffraction (XRD) analysis. Studying the film structure with the use of XRD showed that the prepared silicon carbonitride coatings are X-ray amorphous. It has been found that the coating deposition rate and the structure of coatings depend on the process parameters: HMDS flow rate and plasma-generating gas (argon or (Ar +</span></span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">He). The method allows depositing SiCN films at a high speed and a hardness of 20</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">-</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">22 GPa.</span>展开更多
文摘A new laser-plasma deposition method has been developed for the plasma chemical deposition of hard silicon carbonitride coatings on stainless steel substrates from the hexamethyldisilazane (HMDS) Si<sub><span style="font-size:12px;font-family:Verdana;">2</span></sub><span style="font-family:Verdana;">NH(CH</span><sub><span style="font-size:12px;font-family:Verdana;">3</span></sub><span style="font-family:Verdana;">)</span><sub><span style="font-size:12px;font-family:Verdana;">6</span></sub><span style="font-family:Verdana;"> vapor in a high-speed Ar and Ar</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">+</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">10 vol.% He gas stream at the HMDS gas flow activation after the laser beam focus. The method allows depositing silicon carbonitride coatings at the rate of 0.4</span><span style="font-family:Verdana;"> - </span><span style="font-family:;" "=""><span style="font-family:Verdana;">1.2 μm·min</span><sup><span style="font-size:12px;font-family:Verdana;">-1</span></sup><span style="font-family:Verdana;">, </span><i><span style="font-family:Verdana;">i.e.</span></i><span style="font-family:Verdana;"> ~2 times higher than that at introducing HMDS in the laser beam focus zone. The properties of the prepared coatings have been studied by the methods of IR and Raman spectroscopy, atomic force microscopy, nanoindentation and X-ray diffraction (XRD) analysis. Studying the film structure with the use of XRD showed that the prepared silicon carbonitride coatings are X-ray amorphous. It has been found that the coating deposition rate and the structure of coatings depend on the process parameters: HMDS flow rate and plasma-generating gas (argon or (Ar +</span></span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">He). The method allows depositing SiCN films at a high speed and a hardness of 20</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">-</span><span style="font-family:Verdana;"> </span><span style="font-family:Verdana;">22 GPa.</span>