Un-doped and Cu-doped ZnS（ZnS：Cu） thin films were synthesized by Successive Ion Layer Absorption and Reaction（SILAR） method. The UV–visible absorption studies have been used to calculate the band gap values of t...Un-doped and Cu-doped ZnS（ZnS：Cu） thin films were synthesized by Successive Ion Layer Absorption and Reaction（SILAR） method. The UV–visible absorption studies have been used to calculate the band gap values of the fabricated ZnS：Cu thin films. It was observed that by increasing the concentration of Cu^2＋ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm.The peak positions of the luminescence showed a red shift as the Cu^2＋ C ion concentration was increased, which indicates that the acceptor level（of Cu^2＋） is getting close to the valence band of ZnS.展开更多
文摘Un-doped and Cu-doped ZnS（ZnS：Cu） thin films were synthesized by Successive Ion Layer Absorption and Reaction（SILAR） method. The UV–visible absorption studies have been used to calculate the band gap values of the fabricated ZnS：Cu thin films. It was observed that by increasing the concentration of Cu^2＋ ions, the Fermi level moves toward the edge of the valence band of ZnS. Photoluminescence spectra of un-doped and Cu-doped ZnS thin films was recorded under 355 nm. The emission spectrum of samples has a blue emission band at 436 nm.The peak positions of the luminescence showed a red shift as the Cu^2＋ C ion concentration was increased, which indicates that the acceptor level（of Cu^2＋） is getting close to the valence band of ZnS.
