A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on...A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiO, film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60-1:1.75. The tests show that the film is well-bonded with the substrate.展开更多
基金the Nationa1 Science Foundation of China for financial support(contract no.50271065)to this project
文摘A new kind of SiOx film on Al substrate,prepared by Ambient Pressure Chemical Vapor Deposition (APCVD) is reported in this paper. It is proposed that the SiOx particles as products of SiH4 and O2 reaction deposited on the heated Al surface, followed by close packing and further growth to form the thin film. The morphology, composition and microstructure of the film are characterized by SEM, XPS, XRD and HRTEM. The results show that the SiO, film comprises a majority of uncrystalline structure with a fraction of dispersed ordered zones and the atomic ratio of Si/O in the film is 1:1.60-1:1.75. The tests show that the film is well-bonded with the substrate.
