We demonstrate experimentally a high-Q one-dimensional photonic crystal cavity in a widely-used 450×220 nm single mode silicon ridge waveguide.Transmission spectrum measurement is performed by using the vertical ...We demonstrate experimentally a high-Q one-dimensional photonic crystal cavity in a widely-used 450×220 nm single mode silicon ridge waveguide.Transmission spectrum measurement is performed by using the vertical fiber-grating coupling characterization method.The Q factor up to 2.6×10^(4) is found by fitting the line shape of the transmission spectrum,and the normalized transmission of nearly 20%is achieved.Three-dimensional finite difference time domain calculations show that the modal volume of the fundamental mode is 1.1(λ/n)^(3).With the standard silicon waveguide width,the demonstrated 1D PhC cavity may be used as a building block for integrated photonic circuits and on-chip sensing applications.展开更多
Due to the local densification, high-energy C and doped ions can greatly affect the bonding configurations of diamond-like carbon films. We investigate the corresponding affection of different incident ions with energ...Due to the local densification, high-energy C and doped ions can greatly affect the bonding configurations of diamond-like carbon films. We investigate the corresponding affection of different incident ions with energy from 10eV to 600eV by Monte Carlo methods. The ion-implanted mechanism called the subplantation （for C, N, O, W, Y, etc.） is confirmed. Obvious thermal effect could be induced by the subplantation of the incident ions. Further, the subplantation of C ions is proved by in situ reflection high energy electron diffraction （RHEED）. The observation from an atomic force microscope （AFM） indicates that the initial implantation of C ions might result in the final primitive-cell-like morphology of the smooth film （in an area of 1.2 mm× 0.9 mm, rms roughness smaller than 20 nm by Wyko）.展开更多
基金Supported by the National Natural Science Foundation of China under Grant No 61228501the National High-Technology Research and Development Program of China under Grant No 2012AA012203+3 种基金the Doctoral Discipline Foundation of Ministry of Education under Grant No 20120101110054the Fujian-Provincial Education Department Foundation of China under Grant No JK2013053the Young Researcher Foundation of NIT under Grant No 1141257G301Award for Excellent Doctoral Student granted by the Ministry of Education of China.
文摘We demonstrate experimentally a high-Q one-dimensional photonic crystal cavity in a widely-used 450×220 nm single mode silicon ridge waveguide.Transmission spectrum measurement is performed by using the vertical fiber-grating coupling characterization method.The Q factor up to 2.6×10^(4) is found by fitting the line shape of the transmission spectrum,and the normalized transmission of nearly 20%is achieved.Three-dimensional finite difference time domain calculations show that the modal volume of the fundamental mode is 1.1(λ/n)^(3).With the standard silicon waveguide width,the demonstrated 1D PhC cavity may be used as a building block for integrated photonic circuits and on-chip sensing applications.
基金Supported by the Science Foundation of China Academy of Engineering Physics under Grant No 2005Z0805, and China Postdoctoral Science Foundation （No 20090451424）.
文摘Due to the local densification, high-energy C and doped ions can greatly affect the bonding configurations of diamond-like carbon films. We investigate the corresponding affection of different incident ions with energy from 10eV to 600eV by Monte Carlo methods. The ion-implanted mechanism called the subplantation （for C, N, O, W, Y, etc.） is confirmed. Obvious thermal effect could be induced by the subplantation of the incident ions. Further, the subplantation of C ions is proved by in situ reflection high energy electron diffraction （RHEED）. The observation from an atomic force microscope （AFM） indicates that the initial implantation of C ions might result in the final primitive-cell-like morphology of the smooth film （in an area of 1.2 mm× 0.9 mm, rms roughness smaller than 20 nm by Wyko）.
